Sub-0.30-μm i-line photoresist: formulation strategy and lithographic characterization

Yu, Jaclyn J.; Meister, Catherine C.; Vizvary, Gerald; Xu, Cheng-Bai; Fallon, Patricia

doi:10.1117/12.312389

Cited by 4 publications

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“…A sharp or notch development response depends on the strength of inhibition between the PAC and novolak resin, the molecular weight distribution of the resin and the developer concentration. A strongly inhibiting PAC and narrow resin molecular weight distribution has been found to increase dissolution contrast and the resulting resolution [12]. The developer concentration is adjusted to provide development at the appropriate relative PAC concentration located at the target linewidth.…”

Section: Exposure and Dissolution Parameter Optimization Utilizing Thmentioning

confidence: 99%

Characterization of a non-chemically amplified resist for photomask fabrication using a 257-nm optical pattern generator

et al. 1999

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I-line optical pattern generators using non-chemically amplified resists have become the workhorses for high throughput mask fabrication. The demand for smaller and more uniform features on photomasks has driven the development of a 257 nm optical pattern generator. A non-chemically amplified resist is being developed to maximize the performance of this new 257 nm mask tool. Resist characterization and lithography simulation are being used to formulate a non-chemically amplified resist for 257 nm optical pattern generators.Non-chemically amplified resists are advantageous for us in mask fabrication due to their storage and post-exposure stability. Chemically amplified resists may provide higher performance but they also require environmental mini-environments and a post-exposure bake equipment not commonly present in mask houses. Diazonaphthoquinone (DNQ)/ novolak resists have not been used for DUV Integrated Circuit (IC) applications mainly due to the low sensitivity and the strong absorbance of the DNQ photoactive compound (PAC) at 248 nm. However, a 2,1,4 DNQ based resist has been characterized that bleaches at 257 nm and inhibits novolak. The photoproduct of the 2,1,4 DNQ PAC is much more transparent at 257 nm than 248 nm. Novolak resin is too strongly absorbing for use in formulating efficient 248 nm resists, but novolak has an absorbance minimum at 257 nm that provides transparency similar to poly (hydroxystyrene).Lithography simulation is being used to develop a non-chemically amplified resist to minimize the expensive iteration of manufacturing trials. An exposure system using a 257 nm frequency doubled Ar laser system has been constructed to study the resist photokinetics. Dill exposure parameters (A, B and C) have been extracted for a 2,1,4 DNQ/ novolak based resist. Dissolution rate measurements have been made with a DRM developed at the University of Texas at Austin. Simulation is used to determine the optimal resist absorption, bleaching, dose and dissolution properties to maximize resolution. It is possible to formulate a high performance resist for 257nm if care is taken in optimization of the formulation.

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Section: Exposure and Dissolution Parameter Optimization Utilizing Thmentioning

confidence: 99%

Characterization of a non-chemically amplified resist for photomask fabrication using a 257-nm optical pattern generator

et al. 1999

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Optical lithography simulation and photoresist optimization for photomask fabrication

et al. 1999

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Parametric Study and Thickness Evaluation of Photoresist Development for the Formation of Microgap Electrodes Using Surface Nanoprofiler

Humayun

Hashim

2012

AMR

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A compact nanolaboratory on single chip is one of the challenging tasks for future reproductively of sensitive and selective lab-on-chip. This paper reports a simple and controllable technique for patterning microgap structures on (PR-1 2000A) positive photoresist. For the pattern transformation conventional lithography technique was used integrated with precise resolution mask namely chrome mask. This technique provides an especially simple method for the formation of micro features sizes of gaps onto the photoresist. The thickness of developed microgap structures on photoresist directly relates with the coating speed of spin coater.

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Sub-0.30-μm i-line photoresist: formulation strategy and lithographic characterization

Cited by 4 publications

References 0 publications

Characterization of a non-chemically amplified resist for photomask fabrication using a 257-nm optical pattern generator

Characterization of a non-chemically amplified resist for photomask fabrication using a 257-nm optical pattern generator

Optical lithography simulation and photoresist optimization for photomask fabrication

Parametric Study and Thickness Evaluation of Photoresist Development for the Formation of Microgap Electrodes Using Surface Nanoprofiler

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