Optical lithography simulation and photoresist optimization for photomask fabrication

Rathsack, Benjamen M.; Tabery, Cyrus; Scheer, Steven; Pochkowski, Mike; Philbin, Cecilia E.; Kalk, Franklin D.; Henderson, Clifford L.; Buck, Peter; Willson, C. Grant

doi:10.1117/12.350173

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…This is the case of positive (negative) tone resist where the exposed area becomes (in)soluble [6]. A post exposure bake is applied to reduce the roughness caused by the standing wave phenomena due to the interference pattern of the incident light [6,7]. Thin photoresists should be more photosensitive towards ultraviolet lithography to create a chemical contrast.…”

Section: Introductionmentioning

confidence: 99%

Self-assembled monolayers as inhibitors for area-selective deposition: A novel approach towards resist-less EUV lithography

Lodha

Pollentier

Conard

et al. 2022

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Self-assembled monolayers as inhibitors for area-selective deposition: A novel approach towards resist-less EUV lithography

Lodha

Pollentier

Conard

et al. 2022

Applied Surface Science

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“…Furthermore, the parameters related to the process, such as the film stacks, postexposure bake (PEB), and photoresist development, have a strong impact on the process window (PW). 6,7 However, most published optimization technologies were implemented under fixed process conditions. 3,8,9 Moreover, lithography-tool parameters such as the numerical aperture (NA) and source parameter also determine the PW.…”

Section: Introductionmentioning

confidence: 99%

Co-optimization of the mask, process, and lithography-tool parameters to extend the process window

Guo

Dong

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Optimization technologies have been widely applied to improve lithography performance, such as optical proximity correction and source mask optimization (SMO). However, most published optimization technologies were performed under fixed process conditions, and only a few parameters were optimized. A method for mask, process, and lithography-tool parameter co-optimization (MPLCO) is developed to extend the process window. A normalized conjugate gradient algorithm is proposed to improve the convergence efficiency of the MPLCO when optimizing different scale parameters. In addition, a parametric mask and source are used in the MPLCO that could obtain exceedingly low mask and source complexity compared with a traditional SMO. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Resists for Mask Making

Rathsack¹,

Willson²,

Medeiros³

2005

Handbook of Photomask Manufacturing Technology

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Optical lithography simulation and photoresist optimization for photomask fabrication

Cited by 3 publications

References 13 publications

Self-assembled monolayers as inhibitors for area-selective deposition: A novel approach towards resist-less EUV lithography

Self-assembled monolayers as inhibitors for area-selective deposition: A novel approach towards resist-less EUV lithography

Co-optimization of the mask, process, and lithography-tool parameters to extend the process window

Resists for Mask Making

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