Self-assembled monolayers as inhibitors for area-selective deposition: A novel approach towards resist-less EUV lithography

Lodha, Jayant K.; Pollentier, Ivan; Conard, Thierry; Vallat, R.; Gendt, Stefan De; Armini, Silvia

doi:10.1016/j.apsusc.2022.154657

Cited by 8 publications

(4 citation statements)

References 58 publications

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“…This deposition process was conducted at a temperature of 300 °C. Further details of the substrates and TiO 2 deposition process can be found in a previous study [ 37 ].…”

Section: Methodsmentioning

confidence: 99%

“…To overcome the issues associated with photoresist, the study deposited these SAMs onto a TiO 2 substrate, which is photocatalytic in nature. The photoactive surface aided the decomposition of the SAMs when exposed to EUV, thus producing a contrast in the exposed region [ 37 ]. Perfluorododecyl iodide (I-PFC12), as shown in Figure 1 , is a SAM comprised of an iodine head group and a fluorocarbon backbone chain, making it a promising new candidate for this method.…”

Section: Introductionmentioning

confidence: 99%

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Degradation of Perfluorododecyl-Iodide Self-Assembled Monolayers upon Exposure to Ambient Light

Colbeck Kirby,

Lodha,

Astley

et al. 2024

Nanomaterials

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Perfluorododecyl iodide (I-PFC12) is of interest for area-selective deposition (ASD) applications as it exhibits intriguing properties such as ultralow surface energy, the ability to modify silicon’s band gap, low surface friction, and suitability for micro-contact patterning. Traditional photolithography is struggling to reach the required critical dimensions. This study investigates the potential of using I-PFC12 as a way to produce contrast between the growth area and non-growth areas of a surface subsequent to extreme ultraviolet (EUV) exposure. Once exposed to EUV, the I-PFC12 molecule should degrade with the help of the photocatalytic substrate, allowing for the subsequent selective deposition of the hard mask. The stability of a vapor-deposited I-PFC12 self-assembled monolayer (SAM) was examined when exposed to ambient light for extended periods of time by using X-ray photoelectron spectroscopy (XPS). Two substrates, SiO2 and TiO2, are investigated to ascertain the suitability of using TiO2 as a photocatalytic active substrate. Following one month of exposure to light, the atomic concentrations showed a more substantial fluorine loss of 10.2% on the TiO2 in comparison to a 6.2% loss on the SiO2 substrate. This more pronounced defluorination seen on the TiO2 is attributed to its photocatalytic nature. Interestingly, different routes to degradation were observed for each substrate. Reference samples preserved in dark conditions with no light exposure for up to three months show little degradation on the SiO2 substrate, while no change is observed on the TiO2 substrate. The results reveal that the I-PFC12 SAM is an ideal candidate for resistless EUV lithography.

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“…This deposition process was conducted at a temperature of 300 °C. Further details of the substrates and TiO 2 deposition process can be found in a previous study [ 37 ].…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Degradation of Perfluorododecyl-Iodide Self-Assembled Monolayers upon Exposure to Ambient Light

Colbeck Kirby,

Lodha,

Astley

et al. 2024

Nanomaterials

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“…Moreover, diffusion, in particular for chemically amplified resists (CARs) ( 5 ), and the stochastic nature of the development after the exposure ( 6 ) are important factors that induce line-edge roughness and eventually limit the ultimate resolution of the photoresist. Recently, there have been promising attempts to scale down the resist thickness by patterning self-assembled monolayers with EUV light, combined with selective growth ( 7 ) or selective-area deposition ( 8 ).…”

Section: Introductionmentioning

confidence: 99%

Resistless EUV lithography: Photon-induced oxide patterning on silicon

et al. 2023

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In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated silicon (100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons can induce surface reactions on a partially hydrogen-terminated silicon surface and assist the growth of an oxide layer, which serves as an etch mask. This mechanism is different from the hydrogen desorption in scanning tunneling microscopy–based lithography. We achieve silicon dioxide/silicon gratings with 75-nanometer half-pitch and 31-nanometer height, demonstrating the efficacy of the method and the feasibility of patterning with EUV lithography without the use of a photoresist. Further development of the resistless EUV lithography method can be a viable approach to nanometer-scale lithography by overcoming the inherent resolution and roughness limitations of photoresist materials.

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“…SAMs are organic layers, which are formed by self-assembly of surfactant molecules at surfaces. SAMs can be applied to enable surface functional control to prevent pattern collapse during drying [1] and as a protective layer for ASD integration [2,3]. To be successful, these applications require the formation of high-density, defect-free, so-called well-packed SAM at the nm scale.…”

Section: Introductionmentioning

confidence: 99%

Defect Mapping and Densification in Self-Assembled Monolayers of Octadecyltrichlorosilane on SiO<sub>2</sub>

Miyamoto

Yoshida

Utsunomiya

et al. 2023

SSP

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Self-assembled monolayers (SAMs) can be used for surface functional control to assist with pattern collapse prevention and as a protective layer to enable Area Selective Deposition (ASD). To be successful, these applications require the formation of a high-density, defect-free, so-called well-packed SAM at the nm scale. In this paper, we describe a method to map the nm scale defects of octadecyltrichlorosilane (ODTS) SAMs using a post-etching AFM analysis of the surface of the substrate and used this technique to develop a process to form high-density, defect-free SAM layer at the nm scale. This was achieved by optimizing the water concentration in the solvent for the precursor solution and annealing after SAM formation.

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Self-assembled monolayers as inhibitors for area-selective deposition: A novel approach towards resist-less EUV lithography

Cited by 8 publications

References 58 publications

Degradation of Perfluorododecyl-Iodide Self-Assembled Monolayers upon Exposure to Ambient Light

Degradation of Perfluorododecyl-Iodide Self-Assembled Monolayers upon Exposure to Ambient Light

Resistless EUV lithography: Photon-induced oxide patterning on silicon

Defect Mapping and Densification in Self-Assembled Monolayers of Octadecyltrichlorosilane on SiO<sub>2</sub>

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