Melt‐processed organic–inorganic perovskite channel layers (see Figure) are demonstrated in field‐effect transistors fabricated on both silicon and polyimide substrates. Linear and saturation regime field‐effect mobilities for the melt‐processed devices are enhanced relative to the values achieved for analogous spin‐coated devices due, at least in part, to the improved grain structure of the melt‐processed films.

The organic-inorganic hybrid [(CH(3))(3)NCH(2)CH(2)NH(3)]SnI(4) presents a layered perovskite structure, templated by an organic dication containing both a primary and a quaternary ammonium group. Due to the high charge density and small size of the organic cation, the separation of the perovskite layers is small and short iodine-iodine contacts of 4.19 A are formed between the layers. Optical thin-film measurements on this compound indicate a significant red shift of the exciton peak (630 nm) associated with the band gap, as compared with other SnI(4)(2)(-)-based layered perovskite structures.

The thermal properties of semiconducting tin(II) iodide based hybrid perovskites have been modified by tailoring the organic component of the structure, thereby reducing the melting temperature (b) well below the decomposition point (c) for these systems. The more stable melt phase has enabled the first demonstration of crystallographically oriented, melt-processed, hybrid films on flexible Kapton substrates. In addition, a premelting structural transition (a) has been characterized for the perovskite systems using thermal analysis and temperature-programmed X-ray diffraction.

This article presents experimental results that suggest that classical Fickian diffusion cannot account for any significant fraction of the critical dimension bias observed in chemically amplified photoresists. A transport mechanism based on reaction front propagation is proposed as a possible explanation for the experimental observations.

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