Articles you may be interested inGas diffusion electrode setup for catalyst testing in concentrated phosphoric acid at elevated temperatures Rev. Sci. Instrum. 86, 024102 (2015); 10.1063/1.4908169Submillisecond post-exposure bake of chemically amplified resists by C O 2 laser spike annealing Effects of photoacid generator incorporation into the polymer main chain on 193 nm chemically amplified resist behavior and lithographic performance In a chemically amplified resist absorbed photons generate stable catalyst molecules instead of directly switching resist solubility via photochemical reaction. This allows for much lower exposure doses to be used in imaging. Some catalyst mobility is necessary to achieve amplification since the catalyst must move from reaction site to reaction site, but a mobile catalyst can blur the deposited aerial image. Catalyst molecules that are free to move in exposed regions are also free to move into adjacent unexposed regions. Understanding acid catalyst diffusion in photoresist resins is complicated by the constantly changing chemical environment the diffusing catalyst experiences as the resist undergoes chemical reactions. The diffusing catalyst promotes chemical reactions which change the properties of its surrounding resin. In addition, it is possible a transient material state is generated by volatile reaction byproducts and their desorption from the film. In most photoresist systems it is impossible to separate reaction and diffusion effects. This work describes studies of acid diffusion in polymers that are close structural analogs to reactive photoresist resins but do not react with the diffusing acidic catalyst. The purpose of this study into nonreactive polymer is to gain insight into the more complex, reactive systems. In addition, experiments with polymeric photoacid generators are reported. These materials provide added insight into acid transport in photoresist materials.
Optical immersion lithography utilizes liquids with refractive indices >1 (the index of air) below the last lens element to enhance numerical aperture and resolution, enabling sub-40-nm feature patterning. This shift from conventional dry optical lithography introduces numerous challenges requiring innovations in materials at all imaging stack levels. In this article, we highlight the recent materials advances in photomasks, immersion fluids, topcoats, and photoresists. Some of the challenges encountered include the fluids' and photomask materials' UV durability, the high-index liquids' compatibility with topcoats and photoresists, and overall immersion imaging and defectivity performance. In addition, we include a section on novel materials and methods for double-patterning lithography-a technique that may further extend immersion technology by effectively doubling a less dense pattern's line density. 93 Annu. Rev. Mater. Res. 2009.39:93-126. Downloaded from www.annualreviews.org by Otterbein University on 09/17/13. For personal use only.
This article presents experimental results that suggest that classical Fickian diffusion cannot account for any significant fraction of the critical dimension bias observed in chemically amplified photoresists. A transport mechanism based on reaction front propagation is proposed as a possible explanation for the experimental observations.
A carbon-doped silicon oxide (CDO) finds use as a material with a low dielectric constant (k) for copper interconnects in multilayered integrated circuits (ICs).
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