Hybrid Field-Effect Transistor Based on a Low-Temperature Melt-Processed Channel Layer

Abstract

Melt‐processed organic–inorganic perovskite channel layers (see Figure) are demonstrated in field‐effect transistors fabricated on both silicon and polyimide substrates. Linear and saturation regime field‐effect mobilities for the melt‐processed devices are enhanced relative to the values achieved for analogous spin‐coated devices due, at least in part, to the improved grain structure of the melt‐processed films.

Mixtures of quasi-two and three dimensional hybrid organic-inorganic semiconducting perovskites for single layer LED

“…The inorganic part is usually the semiconductor, composed of a metal halide unit network, while the organic part is usually composed of electrooptically inactive amines. In the past, a wide set of combinations of inorganic and organic parameters have led to HOIS with a variety of properties such as controlled absorption in the whole spectral ultraviolet-visible region [2], thin film transistor gate materials comparable to amorphous Si [23][24][25] or energy transfer optical phenomena, for example see [26][27][28] and refs. therein.…”

Room temperature light emitting diode based on 2D hybrid organic-inorganic low dimensional perovskite semiconductor

“…Such examples are HOIS with controllable excitonic peaks covering the ultraviolet-visible region [2], thin film transistor gate materials comparable to amorphous Si [19][20][21] or HOIS exhibiting extremely interesting energy transfer optical phenomena [22,23]. Finally, the 3D and quasi-2D lead halide HOIS have been successfully employed for solar cell applications [24,25].…”

Electronic structure calculations and optical properties of a new organic–inorganic luminescent perovskite: (C9H19NH3)2PbI2Br2

“…As a consequence, their unusual semiconducting properties have been widely studied and used for photoluminescence materials, thin-film field-effect transistors, electroluminescent devices, etc. [8,[20][21][22].…”