Directed self-assembly (DSA) has the potential to extend scaling for both line/space and hole patterns. DSA has shown the capability for pitch reduction (multiplication), hole shrinks, CD self-healing as well as a pathway towards line edge roughness (LER) and pattern collapse improvement [1][2][3][4]. The current challenges for industry adoption are materials maturity, practical process integration, hardware capability, defect reduction and design integration. Tokyo Electron (TEL) has created close collaborations with customers, consortia and material suppliers to address these challenges with the long term goal of robust manufacturability.This paper provides a wide range of DSA demonstrations to accommodate different device applications. In collaboration with IMEC, directed line/space patterns at 12.5 and 14 nm HP are demonstrated with PS-b-PMMA (poly(styrene-b-methylmethacrylate)) using both chemo and grapho-epitaxy process flows. Pre-pattern exposure latitudes of >25% (max) have been demonstrated with 4X directed self-assembly on 300 mm wafers for both the lift off and etch guide chemo-epitaxy process flows. Within TEL's Technology Development Center (TDC), directed selfassembly processes have been applied to holes for both CD shrink and variation reduction. Using a PS-b-PMMA hole shrink process, negative tone developed pre-pattern holes are reduced to below 30 nm with critical dimension uniformity (CDU) of 0.9 nm (3σ) and contact edge roughness (CER) of 0.8 nm (3σ). To generate higher resolution beyond a PS-b-PMMA system, a high chi (χ) material is used to demonstrate 9 nm HP line/ space post-etch patterns. In this paper, TEL presents process solutions for both line/space and hole DSA process integrations.
In this abstract we present a highly manufacturable, high performance 90nm technology with best in class ,performance for 35nm gate-length N and P transistors. Unique, but simple and low cost, process changes have been utilized to modulate channel stress and implant profile to generate enhanced performance with no additional masks. High drive currents of 1193uAium and 587uAium are obtained for nMOS and PMOS transistors respectively at I .2V Vdd and an Ioff of 60nMpm. An industry leading 90nm technology CVil of 0 . 6 1~s and 1 .
High density embedded ferroelectric random access memory (FRAM), operable at 1.5 V, has been fabricated within a 130 nm, 5 lm Cu/fluorosilicate glass (FSG) logic process. To evaluate FRAM extendability to future process nodes, we have measured the bit distribution and reliability properties of arrays with varying individual capacitor areas ranging from 0.40 mm 2 (130 nm node) to 0.15 mm 2 ($65 nm node). Wide signal margins, stable retention ()10 years at 85 C), and high endurance read/write cycling ()10 12 cycles) have been demonstrated, suggesting that reliable, high density FRAM can be realized.
3-Diazopiperi-2,4-diones have been prepared and explored as photoactive substrates for
microlithography. Michael addition of primary amines to methyl acrylate, followed by
amidation with methyl malonate yielded amides that underwent base-catalyzed cyclization
to the corresponding piperi-2,4-diones. The pendant esters of the resultant piperidiones were
removed by hydrolysis and decarboxylation and diazotization was carried out by treatment
with tosyl azide. The resulting 3-diazopiperi-2,4-diones absorb in the 240−260-nm spectral
range, are readily soluble in common solvents, and undergo the Wolff rearrangement with
high quantum yield upon exposure in the deep ultraviolet (DUV) (248−257 nm), affording
ketenes that react with adventitious water to provide transparent, base soluble photoproducts. These characteristics make them ideal chromophores for the design of nonchemically
amplified photoresists for use in the DUV. Bis-diazopiperidione derivatives prepared from
4,8-bis(chlorosulfonylmethyl)tricyclo[5.2.1.02,6]decane and a hydroxyl-functionalized 3-diazopiperi-2,4-dione yielded products that efficiently inhibit novolac dissolution in aqueous
tetramethylammonium hydroxide and are therefore useful for formulating advanced resist
materials.
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