This paper describes some of the basic physicochemical considerations necessary to design a resist for use in 193 nm lithography. Of fundamental importance are the photoreaction which generates the photoacid, the reactivity of the photoacid, the dissolution of the resist in the developer, and the adhesion of the images to the substrate. These phenomena will be discussed and we will show results that demonstrate progress in these areas. In addition, we will show preliminary etch resistance of our polymer system and selected lithographic results.

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