Practical resists for 193-nm lithography using 2.38% TMAH: physicochemical influences on resist performance

Szmanda, Charles R.; Yu, Jaclyn J.; Barclay, George G.; Cameron, James F.; Kavanagh, Robert J.; Blacksmith, Robert F.; Trefonas, Peter; Taylor, G.W.

doi:10.1117/12.275836

Cited by 8 publications

(4 citation statements)

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“…Thin films of poly(carboxylic acids) dissolve much more rapidly than films of poly(phenols) in the alkaline developer solutions that have been adopted as industry standards. The rapid dissolution kinetics pose a challenge in designing resists with the correct solubility characteristics; with appropriate selection of comonomers, however, this can be accomplished. The SEM photomicrograph shown in Figure was printed with a resist consisting of the components shown in Figure …”

Section: Imaging Technologiesmentioning

confidence: 99%

Lithographic Imaging Techniques for the Formation of Nanoscopic Features

1999

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Over the past 30 years the world market for semiconductors has grown at an average annual rate of approximately 15%. This growth has been maintained by the industry's unique ability to consistently provide over this time frame higher device performance at lower cost (achieving a 25-30% per-year cost reduction per function). Microlithography is the key technological driving force for this; in large part, the overall rate of progress in microelectronics is controlled by the rate of advances in microlithographic tools, methods, and materials. Today, the photolithographic technologies that have served the microelectronics community since its inception are widely viewed to be nearing their limits of extendibility. If the historical growth rate is to be maintained in the future, new imaging technologies with the capability of forming features with sub-100 nm dimensions must be devised and refined. In this paper we provide an overview of the issues to be considered for patterning in the sub-100 nm regime and describe the imaging technologies which are currently being evaluated for such use.

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Section: Imaging Technologiesmentioning

confidence: 99%

Lithographic Imaging Techniques for the Formation of Nanoscopic Features

1999

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“…Sci, Technol., Vol.14, No. 3,2001 10% CD) was obtained for 120 nm 1:1 L/S using attenuated phase shift mask on Nikon exposure tool (NA = 0.6). Lines features below 100 nm could be printed from this resist in over-exposed mode.…”

Section: Co Resists Beyond Cobramentioning

confidence: 99%

Novel Classes of Cyclic Olefin Polymers for 193nm Lithography

Varanasi¹,

Allen

Itô

et al. 2001

J. Photopol. Sci. Technol.

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In previous papers we have reported on the lithographic and etch performance of IBM's internally developed 193nm single layer photoresist system which is based on functionalized poly(norbornenes). These polymers are unique in that they offer potentially superior etch resistance when compared to other polymer systems being investigated for 193nm lithography, and in addition, have the requisite transparency which could lead to superior imaging performance as well. However, this class of polymers is unusual in that the dissolution properties are very different when compared to 248nm or other 193nm polymer platforms as has been previously reported by Ito. This paper will focus on the design, properties and lithographic performance of functionalized norbornene polymers we used for 193nm resist materials development.

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“…Even a 50-nm line and space (L/S) pattern produced with strong PSM has been recently reported. 11 However, the bulk organic materials released during the deprotection reaction, including 3,4-dihydro-2H-pyran in MCC TER-1 6 or 2-methyl-propene in Shipley XP 7022, 7 may induce pattern shrinkage and cleanroom pollution. In light of a survey in resist chemistry, the acid-catalyzed dehydration route with water released in postexposure baking (PEB) is considered a promising candidate for resolving these problems (water is a clean and small molecule).…”

Section: Introductionmentioning

confidence: 99%

The kinetics of a negative-tone acrylic photoresist for 193-nm lithography

Hsieh

2000

J. Polym. Sci. A Polym. Chem.

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Practical resists for 193-nm lithography using 2.38% TMAH: physicochemical influences on resist performance

Cited by 8 publications

References 0 publications

Lithographic Imaging Techniques for the Formation of Nanoscopic Features

Lithographic Imaging Techniques for the Formation of Nanoscopic Features

Novel Classes of Cyclic Olefin Polymers for 193nm Lithography

The kinetics of a negative-tone acrylic photoresist for 193-nm lithography

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