Study of doping of InxGa1−xAs films with germanium

Abstract

InxGa1−xAs: Ge films (x ≦ 0.12) grown form the solution in a broad temperature range are investigated. It is found that the donor density in the solid phase increases with increasing growth temperature and fraction of In in the solution while the acceptor density is practically independent of these parameters and the growth direction. It is observed that Nd(111)B > Nd(111)A and (Nd/Na)(111)B > (Nd/Na)(111)A for all the liquid phase compositions investigated. Therefore p(111)B < p(111)A, and this inequality becomes stronger with increasing x. The (111)B films have a less homogeneous profile of the carrier distribution along the thickness than the (111)A‐oriented films. An inhomogeneity of this profile becomes greater with increasing fraction of In in the solution. Under some conditions, a p–n junction, whose distance from a substrate rises with increasing x, is formed in films having the (111)B orientation.

The influence of indium on the pn junction formation in Sidoped LPE layers of gallium arsenide

“…It was found that a p-n junction is formed in In Gal xAs:Ge films if x > 0.1 (4,5). We supposed that additions of indium into the Si-doped GaAs-Ga solution will have x influence on the position of the p-n junction in LPE GaAs films.…”