I n the paper the results of the authors' work are summarized on the preparation of multilayer ASB5 heterostructures with the use of originally designed graphite boat.
An investigation is made of doping of GaAs and InxGa1−xAs films with Sn and Te. The distribution of donors and acceptors, their sum and difference, and the compensation coefficient k = Na/Nd are demonstrated as functions of growth temperature, composition of the liquid phase and substrate orientation. It is shown that Nd, Nd — Na, Nd — Na increase for Te doped films and decrease for Sn doped films when the temperature is lowered. The same parameters increase for Sn doped and decrease for Te doped films with an increase of the indium part in the liquid phase. The inequalities K(111)B (Nd + Na)(111)A were observed for all investigated temperatures and liquid phase compositions.
InxGa1−xAs: Ge films (x ≦ 0.12) grown form the solution in a broad temperature range are investigated. It is found that the donor density in the solid phase increases with increasing growth temperature and fraction of In in the solution while the acceptor density is practically independent of these parameters and the growth direction. It is observed that Nd(111)B > Nd(111)A and (Nd/Na)(111)B > (Nd/Na)(111)A for all the liquid phase compositions investigated. Therefore p(111)B < p(111)A, and this inequality becomes stronger with increasing x. The (111)B films have a less homogeneous profile of the carrier distribution along the thickness than the (111)A‐oriented films. An inhomogeneity of this profile becomes greater with increasing fraction of In in the solution. Under some conditions, a p–n junction, whose distance from a substrate rises with increasing x, is formed in films having the (111)B orientation.
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