A Multipurpose Graphite Boat for LPE Growth of Multilayer Heterostructures

Abstract

I n the paper the results of the authors' work are summarized on the preparation of multilayer ASB5 heterostructures with the use of originally designed graphite boat.

Study of InxGa1–xP/GaAs Films Formation on the Basis of In–Ga–P Liquidus Precised Investigation

“…These peculiarit,ies of the In-Ga-P/GaP contact may be explained on the basis of the relaxation theory which has been described by BOLKHOVITYANOV, 1981BOLKHOVITYANOV, , 1982. The calculated dependence of In-Ga-P supercooling which is necessary for In-Ga-PI GaP quasi-equilibrium is reproduced in Figure 2.…”

“…Particularly this method is widely-spread in the case of ternary and quaternary systems because the computation not always gives a satisfactory agreement with phase equilibrium data extracted from LPE experiments. But we can state now on the basis of the relaxation theory of non-equilibrium liquid-solid contact which had been described (BOLKHOVITYANOV 1981(BOLKHOVITYANOV , 1982) that this method is not correct in some cases.…”

“…Recently we have shown experimentally (BOLKHOVITYANOV 1981) and theoretically (BOLKHOVITYANOV 1982) that the ternary 111-V liquid phase must be supersaturated (supercooled) when contacting with the substrate if the future film and the substrate are lattice-mismatched.…”

Dislocation etch‐pits revealed in submicron (100) GaAs epilayers by selective dissolution in the saturated GaSb melt

“…IAet us indicate the lattice parameters of an investigated solid and the solid equilibrium liquid of which is used for contact as a, and uG correspondingly. So, if u, < (lo the etch-pits have been discovered on different 111-V substrates after their exposure in different 111-V liquids (BOLKHOVITYANOV 1982 b). I n that paper we used the substrates of the { 111) R orientation in major of causes.…”

“…T h e dissolved thickness can br tiiitde so small as 500 A and t h e revealed etch-pits a r e corresponding to t h e c,ntrrtnces of tlislocation lines on t h e cxarriined surface. I t has been showed by one of the authors (BOLKHOVITYANOV 1981(BOLKHOVITYANOV , 1982a) that a 111-V substrate has t o be dissolved in a saturated multicomponent liquid of the same 111-V system if the lattice constant of the equilibrium solid differs from that of the substrate. IAet us indicate the lattice parameters of an investigated solid and the solid equilibrium liquid of which is used for contact as a, and uG correspondingly.…”