I. KORZHOV (b), V. I. YUDAEV (a), and E. H. HAIRI (a) Growth features of LPE n-GaAsl -.-Sb,/n+-GaAs ( n Y lOI5 ~r n -~) continuously graded composition heterostructures are investigated and the electroabsorption spectra in these heterocompositions are analysed. Franz-Keldysh light modulators are used with a modulation coefficient up to 30% in the wavelength region up to 1.06 pm. n+-GaAs c Kom~e~ITpauHeik 3neHTpoHoB n Y loi5 M IIpoBeneHo 3 K c n e p~~e~T a n b~o e accnenosaane CneIiTpOB xnemporrornoLqeHAa TaKHX r e~e p o~o~1 1 0 3~u~f i . C03HaHbI MOJIY-ZMarIaaoHe JIJIMH BOJIH no 1,06 pm.
Electron microscopy was used to study non‐doped GaAs layers obtained in a chloride system Ga‐AsCl3‐H2. Electron concentrations is 1013–1015 cm−3, mobility at liquid nitrogen temprature reaches 200000 cm2/v. sec. It is shown that a fraction of the growth surface taken with (110) faces is less for films with less electron concentration. The main type of defects in pure GaAs layers is precipitates at pinning centres of growth steps. Estimations based on microdiffraction patterns and irradiation effects show that the impurity concentration in them is 1016–1019 cm−3. The impurity in precipitates is assumed to be electrically non‐active, mainly, in interstitial positions.
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