Selective chemical etching of InP substrates in the GalnAsP/InP III-V system is described. A new etchant composed of hydrochloric and phosphoric acids is proposed, and a detailed description of application is provided. It is shown that illumination and the intentional introduction of defects on the surface of InP substrate material greatly facilitate its removal even from the slow etching (lll)A face. Thus on GatnAsP LPE layers grown on (Ill)Boriented ImP substrates, both the (lll)Ga,In and (lll)As,P faces of the epilayers can be exposed.
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