Material‐Selective Chemical Etching in the System InGaAsP / InP

Phatak, S. B.; Kelner, G.

doi:10.1149/1.2129023

Cited by 46 publications

(17 citation statements)

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“…Many authors have reported on the effectiveness of hydrochloric acid (HCl) for etching InP. [8][9][10][11][12] For example, Notten 12 observed that high etch rates of InP were obtained, but only above about 6M HCl concentration. Etching was possible at lower concentrations of HCl only when it was combined with concentrated acetic acid (17.5 M).…”

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confidence: 99%

Chemical Mechanical Polishing of InP

Peddeti

Ong

Leunissen

et al. 2012

ECS J. Solid State Sci. Technol.

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Results of a detailed study of different parameters of the polishing process and their influence on the removal rates (RRs) of InP are presented. RRs with silica-based slurries as well as generation of PH 3 were much higher in the acidic pH regions compared to those in basic pH regions. RRs were also higher than those obtained with harder alumina particles. Smaller silica particles led to higher RRs than larger particles at the same wt% loading, presumably due to the higher total particle surface area. These characteristics suggest an affinity between silica particles and InP similar to that observed earlier between Ta and silica. However, unlike with Ta, replacing the surface silanol groups of the silica particles with dimethyl silane did not suppress the RRs completely. It is proposed that InP removal by silica abrasives is facilitated by the formation of -Si-O-In-, -Si-In-and -Si-P-structures due not only to the reactivity of the silanol groups but also due to the combined effect of the electronegativity of Si atoms, the presence of lone pairs of electrons on In atoms on the InP surface and the electronegativity difference between Si and P.

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confidence: 99%

Chemical Mechanical Polishing of InP

Peddeti

Ong

Leunissen

et al. 2012

ECS J. Solid State Sci. Technol.

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“…InP, and especially the interface in between, are part of the same monocrystal, i.e. the materials are linked directly at the atomic level; (2) InP is etched over InGaAs (and vice versa) with complete selectivity [33]. One can thus view the formation of 3D objects almost solely as the result of mask geometry and the crystal-etchant interaction.…”

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confidence: 99%

Wet-etch bulk micromachining of (100) InP substrates

Eliáš

Kostič

Šoltýs

et al. 2004

J. Micromech. Microeng.

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The study focused on object formation in (100) InP by etching in 3HCl:1H3PO4 through convex and concave square mask patterns of varied orientation and size. Their upper right-hand-side corners were aligned to , and to 15°, 30° and 45° off to . Some -oriented convex squares had - and -oriented corners compensated with rectangular extensions. The concave patterns led to objects with ordinary slow-etching or etch-stop facets along sides in line within and with ordinary and re-entrant facets along sides in line within . The convex patterns (, 15° and 30°) led to objects initially confined by fast-etching facets at corners and slow-etching or etch-stop facets at sides (ordinary between and , and re-entrant between and ). The side facets were eliminated by the progress of the corner ones. They (-oriented patterns) proceeded at rates almost independent of size before the eradication of the side facets, after which they proceeded faster. The -oriented convex patterns led to objects confined only by fast-etching facets. The objects developed at rates that considerably depended on pattern size and etching time. Objects under small patterns developed faster compared to those under large ones. The -oriented corner-compensated patterns led to pyramidal objects confined by facets related to (110), , (101) and .

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“…An InGaP layer seems much more efficient in terms of selectivity of etching chemistry. [14][15][16] Such a layer could hold the chemical solution long enough for the whole substrate to be etched. One would not have to worry about the problems posed by the etching of the edges, because even if the edges are uncovered faster than the center, the fact of having a layer of InGaP which resists to the chemistry protects the multilayer from etching.…”

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confidence: 99%

Transfer of an AlGaAs/GaAs crystalline Bragg mirror from a GaAs substrate to a fused silica substrate by direct bonding

Hui

André

Arnoult³

et al. 2022

Optics and Photonics for Advanced Dimensional Metrology II

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Direct bonding has been a major key technology in many fields nowadays. From microelectronic to optoelectronic technologies, it became a technique used for mass production technology in many different applications. Direct bonding of silicon or silicon dioxide is now a well known process. In this article, we explore this technology through the transfer of III-V AlGaAs/GaAs crystalline multilayer from its native GaAs substrate upon a fused silica substrate (SiO 2 ). The goal of this work is to explore the conception of crystalline Bragg mirrors with low mechanical loss and high optical quality for precision measurement applications. We present the main results obtained for each step of the transfer process. Various experiment such as AFM characterization have been performed on the wafers to probe surface quality. Chemical wet etching with different experimental conditions have been tested to remove the GaAs substrate. We discuss the main challenges of the process, especially the bonding of two rather different materials from the thermo-mechanic point of view. Focus is also made on the chemistry used in the wet etching part to have a selective etching between GaAs and AlGaAs.

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Material‐Selective Chemical Etching in the System InGaAsP / InP

Cited by 46 publications

References 0 publications

Chemical Mechanical Polishing of InP

Chemical Mechanical Polishing of InP

Wet-etch bulk micromachining of (100) InP substrates

Transfer of an AlGaAs/GaAs crystalline Bragg mirror from a GaAs substrate to a fused silica substrate by direct bonding

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