Electrical properties of manganese doped Ga1−xInxAs grown by liquid phase epitaxy

Phatak, S. B.; Bedair, S. M.; Fujita, Shigeo

doi:10.1016/0038-1101(80)90100-8

Cited by 9 publications

(1 citation statement)

References 16 publications

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“…This indicates that oxygen-containing organometallic compounds can be used as dopant sources without noticeable degradation of the electronic and optical properties of the thin films. Although manganese is a deep level in InP, it is a shallow level in InAs-based alloys [10], thus it is expected that manganese should be a suitable shallow acceptor for III-V alloys deposited by OMVPE including InAsP and InGaAs. Manganese should have some advantages as a dopant in comparison to zinc which is normally used.…”

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confidence: 99%

Epitaxial growth of manganese-doped indium phosphide

Huang

Wessels

1987

J Mater Sci Lett

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The successful preparation of iron-doped semiinsulating InP by organometallic vapour-phase epitaxy (OMVPE) has been recently reported [1][2][3]. The epitaxial layers were of high structural quality and had excellent electrical properties. These studies indicate that transition metal doping using organometallic sources is indeed possible and consequently enables the preparation of a wide range of transition metal doped I I I -V semiconductors. To date, only irondoped InP has been prepared by OMVPE; however, there is potentially a number of other three-dimensional transition metal dopants for InP that are of both technological and scientific importance [4]. In this letter we report the preparation and characterization of manganese-doped InP OMVPE using an organometallic manganese source. Hall effect and photoluminescence measurements were used to assess the electrical and optical properties of the epitaxial layers.

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confidence: 99%