Study of a GaN Schottky diode based hydrogen sensor with a hydrogen peroxide oxidation approach and platinum catalytic metal

Liu, I-Ping; Chang, Che-Wei; Ke, Bu-Yuan; Lin, Kun‐Wei

doi:10.1016/j.ijhydene.2019.10.112

Cited by 16 publications

(21 citation statements)

References 48 publications

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“…The study showed that the presence of a gallium oxide dielectric layer between the Pt metal and the GaN surface could increase the adsorption sites for dissociated H 2 species, thereby improving the related sensing ability towards H 2 gas [85]. The study results showed that the GaN sensor had a high sensing response ratio [85]. The study showed that the sensor exhibited a good high temperature durability and a high sensing speed [85].…”

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 93%

“…Figure 32 shows the energy band diagram of the sensor untreated by PEC. The study of the GaN Schottky diode based H 2 sensor with a H 2 peroxide oxidation approach and platinum catalytic metal was investigated and reported by Liu et al [85]. In that study, the platinum (Pt) catalytic metal and a H 2 peroxide oxidation approach were utilized to fabricate the H 2 sensor based on a GaN Schottky diode [85].…”

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

“…The study of the GaN Schottky diode based H 2 sensor with a H 2 peroxide oxidation approach and platinum catalytic metal was investigated and reported by Liu et al [85]. In that study, the platinum (Pt) catalytic metal and a H 2 peroxide oxidation approach were utilized to fabricate the H 2 sensor based on a GaN Schottky diode [85]. The study showed that the presence of a gallium oxide dielectric layer between the Pt metal and the GaN surface could increase the adsorption sites for dissociated H 2 species, thereby improving the related sensing ability towards H 2 gas [85].…”

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

“…In that study, the platinum (Pt) catalytic metal and a H 2 peroxide oxidation approach were utilized to fabricate the H 2 sensor based on a GaN Schottky diode [85]. The study showed that the presence of a gallium oxide dielectric layer between the Pt metal and the GaN surface could increase the adsorption sites for dissociated H 2 species, thereby improving the related sensing ability towards H 2 gas [85]. The study results showed that the GaN sensor had a high sensing response ratio [85].…”

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

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Review of GaN Nanowires Based Sensors

Nahhas¹

2020

AJN

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This paper presents a review of the recent advances of GaN based nanowires sensors. GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and useful in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications specially in nanowires sensors. GaN nanowires sensors have been used in many devices such as gas sensors, biosensors, and pressure sensors. The recent aspects of GaN based nanowires sensors are presented and discussed. The performance of several sensors based devices which have been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.

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Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 93%

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

Section: Gan Nanowires Sensors Based Devicesmentioning

confidence: 99%

See 2 more Smart Citations

Review of GaN Nanowires Based Sensors

Nahhas¹

2020

AJN

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“…Consejo et al reported experimental results indicating that a change of channel conductivity by hydrogen incorporation is mainly caused by carrier density change, and the change of carrier mobility has a negligible effect [ 11 ]. In many literatures, hydrogen gas sensors with AlGaN/GaN heterostructures employed Schottky diodes or floating-gate HEMTs [ 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 ]. Although a HEMT-type device with three terminals, including the source, drain, and gate, can have an advantage of modulating the response by tuning gate bias [ 20 ], it requires an additional interconnection and eventually increases the complexity of integration between sensor arrays and readout circuitry.…”

Section: Introductionmentioning

confidence: 99%

Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature

2021

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AlGaN/GaN HEMT hydrogen gas sensors were optimized by AlGaN barrier thickness in the gate-source connected configuration demonstrated high response and robust stability up to 500 °C. First, we found that the hydrogen sensing performance of a conventional normally-on HEMT-based sensor was enhanced when zero voltage was applied on the gate in comparison with a floating-gate condition due to a reduced level of the base current. In the next step, to take advantage of the response increase by VGS = 0 V, a new type of sensor with a source-connected gate (SCG) was fabricated to utilize the normally-on operation of the GaN HEMT sensor as a two-terminal device. AlGaN barrier thickness was thinned by the dry-etching process to gain higher transconductance at a zero-gate bias with the reduction of the distance from the 2DEG channel to the AlGaN surface, thereby significantly improve the hydrogen response. The SCG GaN sensor with an ultra-thin AlGaN barrier (9 nm) exhibited responses of 85% and 20% at 200 and 500 °C, respectively, onto 4%-hydrogen gas, which demonstrates a promising ability for harsh environment applications.

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