Improved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching

Shafa, Muhammad; Aravindh, S. Assa; Hedhili, Mohamed N.; Mahmoud, Saleh T.; Pan, Yi; Ng, Tien Khee; Ooi, Boon S.; Najar, Adel

doi:10.1016/j.ijhydene.2020.10.275

Cited by 9 publications

(4 citation statements)

References 88 publications

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“…[ 16 ] The presence of sulfur on GaN surface can cause the formation of gallium ethanedithiolates which results in the removal of surface defects hence improving surface stability. [ 17,18 ] The metal layer can also induce a process called hydrosulfurization, which is catalyzed by metal sulfides where two gallium ethanedithiolates and sulfide atoms can combine with hydrogen explaining the desorption process [ 19 ]

R - S - R + 2 H_{2} \to 2 R H + H_{2} S

…”

Section: Resultsmentioning

confidence: 99%

Highly Sensitive Hydrogen Sulfide Sensor Based on GaN/GaInN Heterostructure

Shahbaz

Scholz

2023

Physica Status Solidi (a)

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Accurate detection of gases such as hydrogen sulfide in the exhaled human breath is of great interest for medical professionals as it can possibly help in the early detection of organ malfunction and other diseases. GaInN heterostructure sensors are sensitive to the changes in the surface potential caused by the adsorption of gas molecules. A quantum well (QW) placed close to the surface experiences a change in the quantum‐confined Stark effect and as a result shifts its photoluminescence signal. Several parameters of the GaInN sensors grown by metal organic vapor phase epitaxy are optimized such as the GaN cap layer, QW thickness, and doping concentration. Moreover, how various metal functionalization layers can improve its sensitivity and selectivity is investigated. Gold (Au) and Silver (Ag) shows sensitivity to hydrogen sulfide in the 10–100 parts per billion (ppb) range. Ammonia gas is also detected in the 5–10 range (ppm) with a sensor structure covered with a thin gold layer.

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R - S - R + 2 H_{2} \to 2 R H + H_{2} S

…”

Section: Resultsmentioning

confidence: 99%

Highly Sensitive Hydrogen Sulfide Sensor Based on GaN/GaInN Heterostructure

Shahbaz

Scholz

2023

Physica Status Solidi (a)

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“…The performance of the sensor can be improved by adding precious metal elements (Pt, Ag, Au, etc) to the surface of GaN [106]. The enhanced photoconductivity of porous gallium nitride suggests possibilities in photosensors and photocatalysis.…”

Section: Gas and Photoelectric Sensormentioning

confidence: 99%

The development and applications of nanoporous gallium nitride in optoelectronics: a review

Ying

Liang

Guo

et al. 2023

Semicond. Sci. Technol.

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The development of nanoporous gallium nitride has widened the material properties and applications in third generation semiconductor area. Nanoporous gallium nitride has been used in laser emitters, light-emitting diodes, optical sensors, and optical energy storage devices. In this paper, we reviewed the most recent progress in the nanoporous GaN field by electrochemical etching. The properties of etched GaN have many superior properties compared with original GaN templates, such as stronger photoluminescence intensity, thermal conductivity, piezo-electricity, more accessible area, stress relief and refractive index. These advantages will make GaN more widely used in the field of optics and optoelectronics. Pore formation can be controlled by adjusting the applied potential and etching time. The nanoporous GaN makes the material of GaN have broader application prospects. We introduced in detail the application prospects of different GaN based processes and subsequent application methods in optoelectronics, sensors, and materials themselves. This review will help to improve further development of nanoporous GaN applications.

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“…In addition to MOS materials, nitrides as third-generation semiconductors show excellent H 2 -sensing performance in extreme environments such as battery thermal runaway, due to their wide band gap and high thermal/chemical stability. , Hermawan et al prepared the GaN gas sensor with n-type semiconductor properties by using α-GaOH as precursor in NH 3 airflow, which enables high sensitivity (the response to 750 ppm H 2 is up to 101.5) and excellent stability (resistance and response values fluctuated within 3% error range after 20 days) even at 500 °C. Shafa et al synthesized porous Pt-GaN gas sensor by embedding Pt nanoparticles and subsequent EDT-passivated metal electrochemical etching for the room-temperature H 2 detection (Figure a,b). H 2 was catalyzed into H atoms by Pt and diffused in passivated porous GaN layer, further forming a dipole layer at the interface and reducing the barrier height.…”

Section: Gas-sensing Optimization Strategies Used For Various Thermal...mentioning

confidence: 99%

“…(c) Room-temperature H 2 -sensing response ranging from 30 to 300 ppm for the Pt-porous GaN untreated and treated with EDT. Panels a–c reproduced with permission from ref . Copyright 2021 Elsevier.…”

Section: Gas-sensing Optimization Strategies Used For Various Thermal...mentioning

confidence: 99%

Gas Sensing Technology for the Detection and Early Warning of Battery Thermal Runaway: A Review

et al. 2022

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With the increasing popularity of battery technology, the safety problems caused by the thermal runaway of batteries have been paid more attention. Detecting the gases released from battery thermal runaway by gas sensors is one of the effective strategies to realize the early safety warning of batteries. The inducing factors of battery thermal runaway as well as the types and mechanisms of the gases generated at each reaction stage are first reviewed. According to the amount and starting time of gas release, five gases suitable for early detection of battery thermal runaway are mainly introduced, including hydrogen (H 2 ), carbon monoxide (CO), carbon dioxide (CO 2 ), ethylene (C 2 H 4 ), and methane (CH 4 ). The application prospects of various gas-sensing technologies in the detection and early warning of battery thermal runaway are further evaluated. Benefiting from the superiorities of small size, high sensitivity, and stable performance, the resistive gas sensors are considered as promising candidates in this field, and their sensing mechanisms are also described in this review. In addition, the applicability and optimization strategies of gas sensors for the detection and early warning of battery thermal runaway are further reviewed systematically, on the basis of various aspects including sensing material, material design, sensing performance, etc. Finally, the potential directions and key points for the future development of gas sensors in the detection and early warning of battery thermal runaway are proposed.

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Improved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching

Cited by 9 publications

References 88 publications

Highly Sensitive Hydrogen Sulfide Sensor Based on GaN/GaInN Heterostructure

Highly Sensitive Hydrogen Sulfide Sensor Based on GaN/GaInN Heterostructure

The development and applications of nanoporous gallium nitride in optoelectronics: a review

Gas Sensing Technology for the Detection and Early Warning of Battery Thermal Runaway: A Review

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