1989
DOI: 10.1016/0165-1633(89)90002-6
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Structural, optical and photoluminescence properties of electron beam evaporated CdSe1−xTex films

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Cited by 53 publications
(26 citation statements)
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“…At x = 0.0 compounds (1 1 0) (1 0 1) (0 0 2) peaks shows the CdZnS system has wurtzite structure [22,23]. For 0 < x < 0.3 the Zn has strong tendency to replace the Cd and there is no possibility to form cubic ZnSe solid solution phase [24].…”
Section: Structural Studiesmentioning
confidence: 97%
“…At x = 0.0 compounds (1 1 0) (1 0 1) (0 0 2) peaks shows the CdZnS system has wurtzite structure [22,23]. For 0 < x < 0.3 the Zn has strong tendency to replace the Cd and there is no possibility to form cubic ZnSe solid solution phase [24].…”
Section: Structural Studiesmentioning
confidence: 97%
“…Thus, the most characteristic crystalline structure of CdTe under conventional conditions is cubic , whereas the most stable lattice for CdS and CdSe is hexagonal wurtzite [6]. As regards CdSe x Te 1Àx ternary alloys of interest, Uthanna and Reddy [7], Mangalhara et al [8] and Islam et al [9] have observed the presence of only cubic phase over the entire composition range. Nevertheless, other studies [10][11][12][13] have revealed that CdSe x Te 1Àx crystallizes in either cubic or hexagonal structure.…”
Section: Introductionmentioning
confidence: 96%
“…In this respect, some experimental and theoretical investigations have been reported for the material system under load [1,2,4,[7][8][9][10][11][12][13][14][15][16]. However, many fundamental properties of CdSe x Te 1Àx ternary alloys remain to be determined precisely.…”
Section: Introductionmentioning
confidence: 96%
“…The decrease of band gap with increase of thickness is likely to be attributed to an increase of particle size and decrease of strain. The band gap value of the film with thickness of 760 ( A is slightly greater than the value reported by Mangalhara et al [20] and Sebastian [21] for films deposited by electron beam evaporation and by Gutierrez [22] for films deposited by electro chemical method. Islam et al [23] has reported a band gap of about 1.5 eV for films deposited by electron beam evaporation.…”
Section: Article In Pressmentioning
confidence: 44%