CuSCN is proposed as a cost-competitive hole selective contact for the emerging organo-metal halide perovskite-based solar cells. The CuSCN films have been deposited by a solution casting technique, which has proven to be compatible with the perovskite films, obtaining planar-like heterojunction-based glass/FTO/TiO 2 /CH 3 NH 3 PbI 3Àx Cl x /CuSCN/Au solar cells with a power conversion efficiency of 6.4%.Among the photovoltaic parameters, the fill factor (i.e. 62%) suggests good carrier selectivity and, therefore, efficient functionality of the TiO 2 and CuSCN charge carrier selective contacts. However, the open-circuit voltage (V oc ), which remains low in comparison with the state of the art perovskite-based solar cells, appears to be the main limiting parameter. This is attributed to the short diffusion length as determined by impedance spectroscopy. However, the recombination losses are not only affected by the CuSCN, but also by the perovskite film. Indeed, variations of 20 C in the thermal annealing of the perovskite films result in changes larger than 200 mV in the V oc . Furthermore, a detailed analysis of the quantum efficiency spectra contributes significant insights into the influence of the selective contacts on the photocurrent of the planar heterojunction perovskite solar cells.
Sb2Se3 thin films are proposed as an alternative light harvester for semiconductor sensitized solar cells. An innovative electrodeposition route, based on aqueous alkaline electrolytes, is presented to obtain amorphous Sb2Se3. The amorphous to crystalline phase transition takes place during a soft thermal annealing in Ar atmosphere. The potential of the Sb2Se3 electrodeposited thin films in semiconductor sensitized solar cells is evaluated by preparing TiO2/Sb2Se3/CuSCN planar heterojunction solar cells. The resulting devices generate electricity from the visible and NIR photons, exhibiting the external quantum efficiency onset close to 1050 nm. Although planar architecture is not optimized in terms of charge carrier collection, photocurrent as high as 18 mA/cm(2), under simulated (AM1.5G) solar light, is achieved. Furthermore, the effect of the Sb2Se3 thickness and microstructural properties on the photocurrent is analyzed, suggesting the hole transport is the main limiting mechanism. The present findings provide significant insights to design efficient semiconductor sensitized solar cells based on advanced architectures (e.g., nanostructured and tandem), opening wide possibilities for progresses in this emerging photovoltaics technology.
Here we report the development of quantum dot sensitized solar cells (QDSCs) using colloidal PbS and PbSeS quantum dots (QDs) and polysulfide electrolyte for high photocurrents. QDSCs have been prepared in a novel sensitizing way employing electrophoretic deposition (EPD) and protecting the colloidal QDs from corrosive electrolyte with a CdS coating. EPD allows a rapid, uniform, and effective sensitization with QDs, while the CdS coating stabilizes the electrode. The effect of electrophoretic deposition time and of colloidal QD size on cell efficiency is analyzed. Efficiencies as high as 2.1 ± 0.2% are reported.
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