Structural and optical properties of hot wall deposited CdSe0.15Te0.85 thin films

The Effect of Alloying on the Bandgap Energy of Nanoscaled Semiconductor Alloys

“…See Table 1 for S b (0, 1), S b (1, 1), E g (0,1), E g (1,1), h(0), and h(1) values. [37], 20 nm (!) [38], ca.…”

Photoinduced absorption edge shift of As20Se60Tl20 films

“…It is observed from this .figure that the amorphous nature decreases as the illumination time increase. One can notice that the obtained values of the optical gap of the unexposed films are less than that reported in [22] this difference may be attributed to an increase in the particle size and decrease in strain and dislocation density [35][36][37][38][39][40].…”

Study on electrodeposited CdSexTe1−x semiconducting thin films

“…CdSe x Te 1−x materials can easily be synthesized by numerous preparation methods in the form of thin polycrystalline films with considerable application potential. These thin films are synthesized using several sophisticated techniques, such as molecular beam epitaxy [5], electron beam evaporation [6], thermal evaporation [7], and hot wall deposition [8]. Though there are number of reports on CdSe x Te 1−x thin films prepared using various techniques but the works on the electrodeposition of CdSe x Te 1−x are scarce.…”