Photoinduced absorption edge shift of As20Se60Tl20 films

El-Denglawey, A.; Dongol, M.; El-Nahass, M.M.

doi:10.1016/j.jlumin.2009.11.036

Cited by 34 publications

(16 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The extinction coefficient (k) provides information about the absorption of light in the medium of the material due to inelastic scattering [44]. Extinction coefficient was calculated using the formula [50];…”

Section: According Tomentioning

confidence: 99%

Effect of post deposition heat treatment on microstructure parameters, optical constants and composition of thermally evaporated CdTe thin films

Kumarasinghe

Dissanayake

Pemasiri

et al. 2017

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

Thin film microstructure and its properties can be effectively altered with post deposition heat treatments. In this respect, CdTe thin films were deposited on glass substrates at a substrate temperature of 200 °C using thermal evaporation technique, followed by air annealing at different temperatures from 200 to 500 °C. Structural analysis reveals that CdTe thin films have a cubic zincblend structure with two oxide phases related to CdTe 2 O 5 and CdTeO 3 at annealing temperature of 400 and 500 °C respectively. Regardless of the annealing temperature, the plane (111) was found to be the preferred orientation for all films. The crystallite size was observed to increase with annealing temperature. All films were found to display higher lattice parameters than the standard, and hence found to carry a compressive stress. Optical measurements suggest high uniformity of films both before and after post deposition heat treatment. Films annealed at 400 °C displayed superior optical properties due to its high refractive index, optical conductivity, relative density and low disorder. Furthermore, according to the compositional measurements, CdTe thin films were found to exhibit Te rich and Cd rich nature at regions near the substrate and center of the film respectively, for all annealing temperatures. However, composition of the regions near the substrate was found to become more Te rich with increasing annealing temperature. The study suggests that changing the annealing temperature as a post deposition treatment affects structural and optical properties of CdTe thin film as well as its composition. According to the observations, films annealed at 400 °C can be concluded to be the best films for photovoltaic applications due to its superior optical and structural properties.

show abstract

Section: According Tomentioning

confidence: 99%

Effect of post deposition heat treatment on microstructure parameters, optical constants and composition of thermally evaporated CdTe thin films

Kumarasinghe

Dissanayake

Pemasiri

et al. 2017

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

show abstract

“…This is a very useful and commonly used method [9,10]. The As-Se-Tl chalcogenide glasses are semiconducting, infrared transmitting, and have gained much industrial and research interest [11][12][13]. According to the available data in the literature there is no available data about optical properties of As-SeTl films near infrared region except co-author earlier work [11,[14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Characterization of As–Se–Tl films near infrared region

El-Denglawey

2011

Journal of Non-Crystalline Solids

Self Cite

View full text Add to dashboard Cite

“…The electronic transition types and other details are available at (Tauc 1976;Mott and Davis 1971;Pankove 1971;El-Denglawey 2018;Figà et al 2009). Tabulated values of E opt gi , E g and the constant A reveal a blueshift in the absorption edge because of the 4 and 8 h of UV illumination, as shown in Table 1 (El-Denglawey et al 2010). Combining the structural details with the optical characterizations provides specific explanations of the increased values of E opt gi , E g and the constant A.…”

Section: Absorption Coefficient Skin Depth and Optical Gap Calculationmentioning

confidence: 96%

“…The values of T are enlarged, and its values at λ = 1100 nm are 85, 88 and 92 for pristine, 4 and 8 h of UV illumination, respectively, while R is the opposite. T displays a wavy shape within the absorption region (λ = 400-750 nm), and a blueshift is observed (El-Denglawey et al 2010).…”

Section: T and R Characterizationmentioning

confidence: 99%

Blueshifted dielectric properties and optical conductivity of new nanoscale nickel-(II)-tetraphenyl-21H,23H-porphyrin films as a function of UV illumination for energy storage applications

et al. 2021

Self Cite

View full text Add to dashboard Cite

Pristine thermally evaporated nickel-(II)-tetraphenyl-21H,23H-porphyrin (NiTPP) thin films are amorphous, but after 4 and 8 h of UV illumination, the films become crystalline with preferred orientations of ( 112), ( 103) and ( 004) and crystallite sizes of (13, 18, 16) and (42, 31, 38) nm after 4 and 8 h, respectively. After UV illumination for 4 and 8 h, the NiTPP thin films are characterized by blueshifted absorption coefficients, increasing the optical and fundamental gap values and decreasing the dispersion parameter values. The dielectric properties display energy storage regions corresponding to the peak values of optical conductivity, which provides an elegant confirmation of the tailoring and tuning of band gaps, energy storage properties and optical conductivity by UV illumination time. Therefore, NiTPP films may be good candidates for environmental and energy storage applications.

show abstract

Photoinduced absorption edge shift of As20Se60Tl20 films

Cited by 34 publications

References 33 publications

Effect of post deposition heat treatment on microstructure parameters, optical constants and composition of thermally evaporated CdTe thin films

Effect of post deposition heat treatment on microstructure parameters, optical constants and composition of thermally evaporated CdTe thin films

Characterization of As–Se–Tl films near infrared region

Blueshifted dielectric properties and optical conductivity of new nanoscale nickel-(II)-tetraphenyl-21H,23H-porphyrin films as a function of UV illumination for energy storage applications

Contact Info

Product

Resources

About