Growth and characterization of CdZn(S1−xSex)2 alloy film deposited by solution growth technique

Studies on growth and characterization of ternary CdS1−xSex alloy thin films deposited by chemical bath deposition technique

“…7(b)) is not linear, even though CdS 1Àx Se x forms a solid solution system. The non-linearity of the band gap variation with compositions have been already reported for Cd 1Àx Zn x S [23,24], CdSSe [25] and also for quaternary CdZn(S 1Àx Se x ) 2 [26]. Such a kind of broad and fine variation/ tunable band gap properties of ternary alloy CdS 1Àx Se x thin film have potential applications in opto-electronic devices.…”

CdS quantum dots: growth, microstructural, optical and electrical characteristics

“…In typical synthesis, aqueous solutions of cadmium sulfate (0.02 M, CdSO 4 ·8H 2 O) and thiourea (0.03 M, (NH 2 ) 2 CS) were mixed and used as sources of cadmium and sulfur, respectively. Ammonia solution was used as buffer solution, and 2-3 drops of TEA (triethanolamine) were added to avoid spontaneous precipitation of the solution [26]. The chemical bath solution was contained into a glass beaker and thermally controlled at 75 ± 1 °C for 15 min.…”

Growth and characterization of tin disulfide (SnS2) thin film deposited by successive ionic layer adsorption and reaction (SILAR) technique

“…0.2 M concentration of SnCl 2 was prepared. In this few drops of triethanolamine (TEA) was added, which helps in achieving uniformity of the thin films over the entire substrate surface [12]. This solution was taken to be as a cationic precursor solution.…”