Strain induced composition profile in InGaN/GaN core–shell nanowires

Pan, Lu; Sun, Chao; Cao, Huawei; Ye, Han; Zhong, Xuxia; Yu, Zhongyuan; Han, Lihong; Wang, Shumin

doi:10.1016/j.ssc.2013.10.011

Cited by 21 publications

(14 citation statements)

References 15 publications

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“…[ 40 ] In addition, the InGaN layer exhibits a distinctively higher HAADF contrast compared with its semipolar counterpart, which indicates a higher In concentration. Issues like In incorporation on different crystal facets, [ 41 ] the sophisticated strain distribution for three dimensional grown structures, [ 42 ] supply of In atoms from the semipolar facets to the top surface [ 43 ] as well as surface conditions [ 44 ] and atomic configurations [ 23,41h ] could have a significant influence on the In incorporation in InGaN layers grown on 3D structures. [ 45 ] At the top interface of the first c ‐plane InGaN layer, a V‐pit is opened and induces additional nanofacets on which the subsequent GaN and InGaN layers are deposited epitaxially.…”

Section: Resultsmentioning

confidence: 99%

Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply

Wang

Bertram

et al. 2020

Advanced Optical Materials

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Color‐tunable InGaN/GaN multi‐quantum‐well (MQW) light‐emitting diodes (LEDs) are reported based on GaN microfacet structure directly grown on c‐plane patterned sapphire substrate by metal organic vapor phase epitaxy (MOVPE) through promoting 3D growth. By adjusting GaN growth temperature and pattern arrangement, a GaN microfacet with almost pure {10true1¯1} semipolar facets is obtained. The multifacetted InGaN/GaN MQW LED chip evolves three distinct emission peaks around 630, 530, and 450 nm in electroluminescence (EL) as injection current increases from 1 to 100 mA. The EL behavior originates from locally different facets of the complex 3D structure: MQWs grown on c‐planes and semipolar facets, respectively, which is confirmed by cathodoluminescence characterization in a scanning transmission electron microscope (STEM‐CL). Considering the dependence of emission wavelength and intensity on injection currents, a programmable power supply is designed to drive the LED. The specific color of the LED is tuned by time‐shared driving of the currents based on three channels with controllable magnitudes and duty cycle from the power supply, covering red, yellow, green, cyan, blue, and purple. Furthermore, white LEDs with high color rendering index (CRI) up to 96.1 and correlated color temperature (CCT) between 4000 and 10 000 K are achieved.

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Section: Resultsmentioning

confidence: 99%

Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply

Wang

Bertram

et al. 2020

Advanced Optical Materials

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“…Even within these domains different indium concentrations are observed, as shown in the nanoprisms. Issues like the different indium incorporation on different crystal facets 32 – 39 , the sophisticated strain distribution for three dimensional grown structures 40 – 45 as well as surface conditions 25 and atomic configurations 39 , 46 could have a significant influence on the indium incorporation in InGaN nanorod shell layers. We want to point out that the growth mechanism of these domains is much more complex compared to the proposed model of Griffiths et al .…”

Section: Resultsmentioning

confidence: 99%

Direct imaging of Indium-rich triangular nanoprisms self-organized formed at the edges of InGaN/GaN core-shell nanorods

Schmidt

Müller

Veit

et al. 2018

Sci Rep

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Higher indium incorporation in self-organized triangular nanoprisms at the edges of InGaN/GaN core-shell nanorods is directly evidenced by spectral cathodoluminescence microscopy in a scanning transmission electron microscope. The nanoprisms are terminated by three 46 nm wide a-plane nanofacets with sharp interfaces forming a well-defined equilateral triangular base in the basal plane. Redshifted InGaN luminescence and brighter Z-contrast are resolved for these structures compared to the InGaN layers on the nanorod sidewalls, which is attributed to at least 4 % higher indium content. Detailed analysis of the inner optical and structural properties reveals luminescence contributions from 417 nm up to 500 nm peak wavelength proving the increasing indium concentration inside the nanoprism towards the nanorod surface.

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“…This enhanced Indium content could be e.g. caused by different strain states at the transition between facets [30], [31]. The junction in this position would have a lower onset potential which leads to a dominant EL emission around 535 nm at low injection currents [32]; in particular using a point contact placed on the top part of the sidewall.…”

Section: Fin Ledmentioning

confidence: 99%

Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls

Hartmann

Steib

Zhou

et al. 2017

Journal of Crystal Growth

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GaN fins are 3D architectures elongated in one direction parallel to the substrate surface. They have the geometry of walls with a large height to width ratio as well as small footprints. When appropriate symmetry directions of the GaN buffer are used, the sidewalls are formed by non-polar {11-20} planes, making the fins particularly suitable for many device applications like LEDs, FETs, lasers, sensors or waveguides. The influence of growth parameters like temperature, pressure, V/III ratio and total precursor flow on the fin structures is analyzed. Based on these results, a 2-temperature-step-growth was developed, leading to fins with smooth side and top facets, fast vertical growth rates and good homogeneity along their length as well as over different mask patterns. For the core-shell growth of fin LED heterostructures, the 2temperature-step-growth shows much smoother sidewalls and less crystal defects in the InGaN QW and p-GaN shell compared to structures with cores grown in just one step. Electroluminescence spectra of the 2temperature-step-grown fin LED are demonstrated.

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Strain induced composition profile in InGaN/GaN core–shell nanowires

Cited by 21 publications

References 15 publications

Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply

Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply

Direct imaging of Indium-rich triangular nanoprisms self-organized formed at the edges of InGaN/GaN core-shell nanorods

Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls

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