Three-dimensional GaN micro-and nanorods with high aspect ratio have recently gained substantial interest in LED research, due to their reduced defect density, their non-polar sidewalls and their increased active area. Here, we present an alternative geometry for high aspect ratio 3D nanostructures: vertically standing GaN "walls", so called GaN fins. With high aspect ratios, these GaN fins exhibit the same interesting characteristics as their rod counterparts mentioned above. Beyond that, due to their geometry, the respective material analysis and device
GaN fins are 3D architectures elongated in one direction parallel to the substrate surface. They have the geometry of walls with a large height to width ratio as well as small footprints. When appropriate symmetry directions of the GaN buffer are used, the sidewalls are formed by non-polar {11-20} planes, making the fins particularly suitable for many device applications like LEDs, FETs, lasers, sensors or waveguides. The influence of growth parameters like temperature, pressure, V/III ratio and total precursor flow on the fin structures is analyzed. Based on these results, a 2-temperature-step-growth was developed, leading to fins with smooth side and top facets, fast vertical growth rates and good homogeneity along their length as well as over different mask patterns. For the core-shell growth of fin LED heterostructures, the 2temperature-step-growth shows much smoother sidewalls and less crystal defects in the InGaN QW and p-GaN shell compared to structures with cores grown in just one step. Electroluminescence spectra of the 2temperature-step-grown fin LED are demonstrated.
GaN fins on GaN-on-sapphire templates are fabricated by continuous mode selective area metalorganic vapor phase epitaxy. The fins exhibit high aspect ratios and smooth nonpolar aplane sidewalls with an ultra-low threading dislocation density of a few 10 5 cm -2 making them ideally suited for optoelectronic to electronic applications. A detailed analysis of the inner structure of GaN fins is provided by the help of marker layer experiments and correlation of results from fins fabricated under different growth conditions, leading to the development of a growth model to explain the final geometry and optical as well as electrical properties of these high aspect ratio fins. Distinctly different material properties for the central and outer parts of the fins are detected. Whereas the outer sidewalls represent high quality GaN surfaces with
The fabrication and use of silicon nanowire (SiNW) array-patterned microcantilever sensors for enhancing aerosol mass detection are described. Surface modification of the cantilever is performed selectively by combining the processes of nanoimprint lithography, photolithography and inductively coupled plasma cryogenic reactive ion etching. Cylindrical wire structures of 300 nm diameter with aspect ratios of 3-7 can be realised for the current SiNWs, which can be altered depending on the nanoimprint stamp size and etching recipe. Owing to the rise in the collection surface area of the sensor provided by vertical SiNWs, an increase of aerosol sampling efficiency can be obtained during cigarette smoke exposure, which is a factor of 1.5 higher than that of a corresponding plain cantilever. This proposed structure is intended to be used as a sensor module of a personal aerosol mass detector.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.