The incorporation of colloidal quantum dots (QDs) into ionic crystals of various salts (NaCl, KCl, KBr, etc.) is demonstrated. The resulting mixed crystals of various shapes and beautiful colors preserve the strong luminescence of the incorporated QDs. Moreover, the ionic salts appear to be very tight matrices, ensuring the protection of the QDs from the environment and as a result providing them with extraordinary high photo-and chemical stability. A prototype of a white light-emitting diode (WLED) with a color conversion layer consisting of this kind of mixed crystals is demonstrated. These materials may also find applications in nonlinear optics and as luminescence standards.

The incorporation of colloidal quantum dots (QDs) into solid matrices, especially ionic salts, holds several advantages for industrial applications. Here, we demonstrated via absolute measurements of photoluminescence quantum yields (PL-QY) that the photoluminescence of aqueous CdTe QDs can be considerably increased upon incorporation into a salt matrix with a simple crystallization procedure. Enhancement factors of up to 2.8 and a PL-QY of 50 to 80%, both in NaCl crystals and incorporated in silicone matrices, were reached. The fact that the achievable PL enhancement factors depend strongly on PL-QY of the parent QDs can be described by the change of the dielectric surrounding and the passivation of the QD surface, modifying radiative and nonradiative rate constants. Time-resolved PL measurements revealed noncorrelating PL lifetimes and PL-QY, suggesting that weakly emissive QDs of the ensemble are more affected by the enhancement mechanism, thereby influencing PL-QY and PL lifetime in a different manner.

850 1090A uniform array of gallium nitride core-shell microrod (MR) lightemitting diode (LED) structures was grown by metalorganic vapor phase epitaxy. Defects and the quantum well (QW) luminescence in an individual rod were investigated by scanning tunneling electron microscopy (STEM) and STEM cathodoluminescence. Luminescence with different wavelength was detected from the quantum wells on the semipolar tip facets and the nonpolar sidewalls of the MRs. Furthermore, the MR array is processed into LED chips. The electro-optical characteristics of the devices are analyzed. Two separate emission bands are distinguished, which are attributed to the QWs on the semipolar tip facets and the nonpolar sidewalls, respectively. To obtain white LEDs, micrograin phosphors were developed which fit in between individual MRs. By using electrophoretic particle deposition, these phosphors are deposited onto the MR LED chips. Color coordinates, color temperature, and device efficiency are evaluated.Blue (top) and phosphor-converted white (bottom) microrod LEDs on 4 00 wafer.

Nitride-based three-dimensional core-shell nanorods (NRs) are promising candidates for the achievement of highly efficient optoelectronic devices. For a detailed understanding of the complex core-shell layer structure of InGaN/GaN NRs, a systematic determination and correlation of the structural, compositional, and optical properties on a nanometer-scale is essential. In particular, the combination of low-temperature cathodoluminescence (CL) spectroscopy directly performed in a scanning transmission electron microscope (STEM), and quantitative high-angle annular dark field imaging enables a comprehensive study of the nanoscopic attributes of the individual shell layers. The investigated InGaN/GaN core-shell NRs, which were grown by metal-organic vapor-phase epitaxy using selective-area growth exhibit an exceptionally low density of extended defects. Using highly spatially resolved CL mapping of single NRs performed in cross-section, we give a direct insight into the optical properties of the individual core-shell layers. Most interesting, we observe a red shift of the InGaN single quantum well from 410 to 471 nm along the nonpolar side wall. Quantitative STEM analysis of the active region reveals an increasing thickness of the single quantum well (SQW) from 6 to 13 nm, accompanied by a slight increase of the indium concentration along the nonpolar side wall from 11% to 13%. Both effects, the increased quantum-well thickness and the higher indium incorporation, are responsible for the observed energetic shift of the InGaN SQW luminescence. Furthermore, compositional mappings of the InGaN quantum well reveal the formation of locally indium rich regions with several nanometers in size, leading to potential fluctuations in the InGaN SQW energy landscape. This is directly evidenced by nanometer-scale resolved CL mappings that show strong localization effects of the excitonic SQW emission.

No abstract

-Single photon emitters (SPEs) are at the basis of many applications for quantum information management. Semiconductor-based SPEs are best suited for practical implementations because of high design flexibility, scalability and integration potential in practical devices. Single photon emission from ordered arrays of InGaN nano-disks embedded in GaN nanowires is reported. Intense and narrow optical emission lines from quantum dot-like recombination centers are observed in the blue-green spectral range. Characterization by electron microscopy, cathodoluminescence and micro-photoluminescence indicate that single photons are emitted from regions of high In concentration in the nano-disks due to alloy composition fluctuations. Single photon emission is determined by photon correlation measurements showing deep antibunching minima in the second order correlation function. The present results are a promising step towards the realization of on-site/on-demand single photon sources in the blue-green spectral range operating in the GHz frequency range at high temperatures.Introduction. -Single photons are ideal "flying" qubits to convey quantum information between distant nodes of a quantum network. Reliable and controlled generation of single photons is therefore a crucial step to develop applications for quantum communication, quantum information processing and quantum metrology [1,2]. Single photons can be emitted in principle by material entities possessing discrete energy levels, as they need a finite time to "recharge" after emission of one photon. The standard method to assess single photon emission is to measure the second order photon correlation function by Hanbury-Brown and Twiss (HBT) interferometry. As shown in Fig. 1, single photons are either reflected or transmitted by a beam splitter, so that the probability of simultaneous detection in the two detectors of the interferometer is zero. The detection events are stored in a Time-Correlated Single Photon Counter (TCSPC), and the resulting correlation function g 2 (τ) shows an

Selective area growth has been applied to fabricate a homogeneous array of GaN nanocolumns (NC) with high crystal quality. The structural and optical properties of single NCs have been investigated at the nanometer-scale by transmission electron microscopy (TEM) and highly spatially resolved cathodoluminescence (CL) spectroscopy performed in a scanning transmission electron microscope (STEM) at liquid helium temperatures. TEM cross-section analysis reveals excellent structural properties of the GaN NCs. Sporadically, isolated basal plane stacking faults (BSF) can be found resulting in a remarkably low BSF density in the almost entire NC ensemble. Both, defect-free NCs and NCs with few BSFs have been investigated. The low defect density within the NCs allows the characterization of individual BSFs, which is of high interest for studying their optical properties. Direct nanometer-scale correlation of the CL and STEM data clearly exhibits a spatial correlation of the emission at 360.6 nm (3.438 eV) with the location of basal plane stacking faults of type I1.

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.