Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires

Gačević, Ž.; Holmes, Mark; Chernysheva, Ekaterina; Müller, Marcus; Torres‐Pardo, Almudena; Veit, Peter; Bertram, F.; Christen, J.; Calbet, José María González; Arakawa, Yasuhiko; Calleja, E.; Lazić, S.

doi:10.1021/acsphotonics.6b01030

Cited by 44 publications

(44 citation statements)

References 50 publications

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“…We will come back to the effects that might have caused these very different behaviours when we study the fundamental properties of non-polar InGaN QDs from a theoretical perspective. Nonetheless, all average DOLP data remain at or above 0.77, indicating statistically high DOLP up to 200 K, comparable even to most low-temperature QD DOLP reports from the literature 15 – 18 , 20 , 21 , 23 , 27 – 29 . The direction of polarisation of these QDs also coincides with the crystal m -axis (perpendicular to the c -axis) at all temperatures studied here.…”

Section: Resultssupporting

confidence: 81%

Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures

Wang

Puchtler

Patra

et al. 2017

Sci Rep

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We report the successful realisation of intrinsic optical polarisation control by growth, in solid-state quantum dots in the thermoelectrically cooled temperature regime (≥200 K), using a non-polar InGaN system. With statistically significant experimental data from cryogenic to high temperatures, we show that the average polarisation degree of such a system remains constant at around 0.90, below 100 K, and decreases very slowly at higher temperatures until reaching 0.77 at 200 K, with an unchanged polarisation axis determined by the material crystallography. A combination of Fermi-Dirac statistics and k·p theory with consideration of quantum dot anisotropy allows us to elucidate the origin of the robust, almost temperature-insensitive polarisation properties of this system from a fundamental perspective, producing results in very good agreement with the experimental findings. This work demonstrates that optical polarisation control can be achieved in solid-state quantum dots at thermoelectrically cooled temperatures, thereby opening the possibility of polarisation-based quantum dot applications in on-chip conditions.

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Section: Resultssupporting

confidence: 81%

Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures

Wang

Puchtler

Patra

et al. 2017

Sci Rep

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“…2 we plot the measured g (2) (0) values as a function of temperature compared to the background limited values, where the dashed line in the figure is the background limited g l (2) (0) value extrapolated from the data, and the upper and lower bounds allow for a ±5% error in ρ . It is clear, from the fact that the measured data points lie along the temperature dependent curve of g l (2) (0), that the background emission is indeed the limiting factor of the single photon emission in this case, leading to a temperature limit of these QDs, in their current form, of ∼77 K. It is important to note that while this result may seem trivial at first glance, it is in contrast to many other examples of III-nitride QDs in the literature, in which such ‘background correction’ does not necessarily result in corrected g (2) (0) values of zero (possibly due to the experimentally temporally-unresolved measurement of a rapid successive emission of two photons, or indeed intermittent multiple photon emission) 14 , 25 – 30 . In the present case, the fact that the background is the sole cause of the g (2) (0) degradation shows that the quantum dots themselves are acting as pure single photon emitters.…”

Section: Introductionmentioning

confidence: 73%

Temperature dependence of the single photon emission from interface-fluctuation GaN quantum dots

Roux

Kang²,

Holmes

et al. 2017

Sci Rep

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The temperature dependent single photon emission statistics of interface-fluctuation GaN quantum dots are reported. Quantum light emission is confirmed at temperatures up to ~77 K, by which point the background emission degrades the emission purity and results in a measured g(2) (0) in excess of 0.5. A discussion on the extent of the background contamination is also given through comparison to extensive data taken under various ambient and experimental conditions, revealing that the quantum dots themselves are emitting single photons with high purity.

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“…In previous studies, emission lifetimes of III‐Nitride QDs have been measured to be on time scales from hundreds of picoseconds to microsecond levels, but there have been no reports of measurements of the lifetimes of GaN interface fluctuation QDs.…”

Section: Introductionmentioning

confidence: 99%

Measurement of the Emission Lifetime of a GaN Interface Fluctuation Quantum Dot by Power Dependent Single Photon Dynamics

Kang

Holmes

Arita

et al. 2018

Physica Status Solidi (a)

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Photon autocorrelation measurements are used to investigate the power dependent single photon emission of recently reported interface fluctuation GaN quantum dots (QDs), which exhibit relatively narrow emission linewidths. The intrinsic exciton lifetime of such a dot is evaluated to be 2.0 ± 0.1 ns from its power dependent single photon dynamics. This result is comparable with typical SK GaN QDs that emit at similar energy, and provides further evidence that the relatively narrow emission linewidth in such structures results from a cleaner dot environment.

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Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires

Cited by 44 publications

References 50 publications

Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures

Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures

Temperature dependence of the single photon emission from interface-fluctuation GaN quantum dots

Measurement of the Emission Lifetime of a GaN Interface Fluctuation Quantum Dot by Power Dependent Single Photon Dynamics

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