2015
DOI: 10.1209/0295-5075/111/24001
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Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays

Abstract: -Single photon emitters (SPEs) are at the basis of many applications for quantum information management. Semiconductor-based SPEs are best suited for practical implementations because of high design flexibility, scalability and integration potential in practical devices. Single photon emission from ordered arrays of InGaN nano-disks embedded in GaN nanowires is reported. Intense and narrow optical emission lines from quantum dot-like recombination centers are observed in the blue-green spectral range. Characte… Show more

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Cited by 26 publications
(43 citation statements)
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References 37 publications
(65 reference statements)
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“…2(d). The histogram reveals a pronounced antibunching dip at zero-time delay (τ = 0) with the anti-bunching value of g (2) (0) = 0.07 ± 0.04 obtained after correction for finite temporal resolution of the HBT setup and the contribution of background photons (including the APDs dark counts and the contribution from additional emission centers within the detection area) [48,49]. This value is well below the 0.5 two-photon threshold, thus proving the quantum nature of When the SAW is applied (with a frequency f 3 = 338 MHz at low temperature) the emission spectrum undergoes an apparent splitting of the two emission lines ( Fig.…”
Section: Saw Modulation Of Single Photon Emitters Based On Gan/(ingamentioning
confidence: 75%
“…2(d). The histogram reveals a pronounced antibunching dip at zero-time delay (τ = 0) with the anti-bunching value of g (2) (0) = 0.07 ± 0.04 obtained after correction for finite temporal resolution of the HBT setup and the contribution of background photons (including the APDs dark counts and the contribution from additional emission centers within the detection area) [48,49]. This value is well below the 0.5 two-photon threshold, thus proving the quantum nature of When the SAW is applied (with a frequency f 3 = 338 MHz at low temperature) the emission spectrum undergoes an apparent splitting of the two emission lines ( Fig.…”
Section: Saw Modulation Of Single Photon Emitters Based On Gan/(ingamentioning
confidence: 75%
“…In this letter, we report a measurement of the lifetime of a GaN interface fluctuation QD by measurements of the photon autocorrelation of the single photon emission from such a dot under various excitation powers . Comparing our measurement with data from typical SK GaN QDs, we gain some insight into the relatively narrow linewidths exhibited by these QDs.…”
Section: Introductionmentioning
confidence: 90%
“…As detailed in Refs. [7,14,15,16], the QD-like emission centers under study are formed by alloy composition fluctuations in the topmost part of the InGaN region.…”
Section: Growth Of Dot-in-a-nanowire Heterostructuresmentioning
confidence: 99%