Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxy

Abstract

Articles you may be interested inGrowth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs (001) Appl. Phys. Lett. 67, 3783 (1995); 10.1063/1.115382Monolayer growth oscillations and surface structure of GaAs(001) during metalorganic vapor phase epitaxy growth J.

Characterization of GaAs and AlGaAs Layers Grown by Laser Atomic Layer Epitaxy

“…To achieve atomic layer epitaxy, laser ALE (laser atomic layer epitaxy) has been used for GaAs crystal growth. 1) Application of laser ALE to line patterning is possible by scanning laser beam. The thickness of the epitaxial layer is expected to be uniform since the growth rate is independent of the laser power.…”

Effects of TMG/AsH3 ratio on GaAs molecular layer growth

“…It is very likely that the monolayer growth consists of monolayer adsorption of an intermediate species formed by one of the compounds and the subsequent surface reaction with the other compound. [10][11][12] In the ideal static induction transistor ͑ISIT͒ proposed by Nishizawa 13 there is an extremely short gate less than the mean-free path of electrons. 1,2 MLE, as proposed by Nishizawa et al, 3 has been realized in GaAs, 3-5 Si, 6,7 and Al x Ga 1Ϫx As, 8 who also developed doping methods.…”

Stepwise Monolayer Growth of GaAs by Pulsed Laser Metal Organic Vapor Phase Epitaxy

“…The strong surface reaction-limited growth was achieved by Ar÷ laser irradiation and the ideal growth rate of one monolayer per cycle was realized [6]. The surface reactionlimited growth model is analyzed and the results are compared with those from experiments.…”

“…Ga-00000(30000 0--00 As -as&&BO*OOO*gOOint EXPERIMENT Details of the experiment have been reported previously [5,6], so that the growth procedure by laser ALE will only be described briefly.…”