Effects of TMG/AsH3 ratio on GaAs molecular layer growth

Abstract

Growth of undoped ZnSe on (100) GaAs by molecular-beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio

Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutylphosphine supply in ultrahigh vacuum

“…͑1͒ At the TEI injection pressures below 2.5ϫ10 Ϫ6 Torr, the growth rate decreases with the TEI injection pressure, and a specular surface is obtained. 30 Therefore, it is assumed that the droplets result from anomalous reactions at low TEI injection pressure, such as the enhancement of TEI decomposition, which results from its large diameter, and the increase in the mean free path of the indium atoms' migration, which results from their low density. Especially at the TEI injection pressure of 10 Ϫ6 Torr, an almost specular sur- FIG.…”

“…30 However, the growth rate of 1 ML/cycle cannot be achieved even if the injection time or the injection pressure of TBP is increased, as shown in Figs. It is expected that the growth rate increases with the TBP injection time or pressure because it has been reported that the growth rate approaches 1 ML/cycle with the increase in the injection time of AsH 3 in MLE growth of GaAs using TMG and AsH 3 as sources.…”

“…In atomic layer epitaxy ͑ALE͒ 3-6 or molecular layer epitaxy ͑MLE͒, [7][8][9][10] in which sources are alternately introduced onto a substrate, the growth rate is precisely controlled not by the injection time and the injection pressure of the sources, but by the number of injection cycles in a self-limiting fashion at a growth temperature as low as 350°C. [23][24][25][26][27][28][29] Self-limiting growth in UHV is an attractive method for achieving low gas consumption, accurate analysis of surface reactions, 30 and combination with self-limiting etching. [11][12][13][14][15][16][17][18][19][20][21][22] However, in growth using an ultrahigh vacuum ͑UHV͒ chamber with a growth pressure of around 10 Ϫ3 Torr or less, self-limiting growth of InP has not been reported.…”

Stoichiometry effects in gaAs epitaxy for ballistic tunneling semiconductor devices

“…Fig. 9 shows the growth rate per cycle at 513 "C versus AsH3 dosage, which means the product of the pressure and the duration of AsH3 in each cycle [16]. In the figure, there were three different characteristics of the growth rate versus AsH3 dosage.…”

“…The dependence of the growth rate per cycle on the evacuation duration of AsH3 and TMG was investigated (11) as shown in Fig. 11 [16]. On the monolayer growth condition, AsH3 was introduced for 100 s at the pressure of 1 X 10" Torr and TMG for 16 s at 5 X 10''…”