Molecular Beam Epitaxy

Herman, Marian A.; Richter, Wolfgang; Sitter, H.

doi:10.1007/978-3-662-07064-2_7

Cited by 56 publications

(4 citation statements)

References 87 publications

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“…The orientation effect of the substrate is translated according to the registry between substrate and overlayer lattices. While for inorganics epitaxial growth is possible only when lattice mismatch falls within a few percent, 5 for organics the onset of this phenomenon requires far less restrictive conditions. In the case of organic overlayers grown on inorganic substrates, many examples reported in the literature demonstrate that, even when the lattice mismatch is of the order of several tens of percent, an orientation effect may be accomplished through a more relaxed epitaxial condition, the so-called coincident epitaxy.…”

Section: Introductionmentioning

confidence: 99%

Organic−Organic Epitaxy of Incommensurate Systems: Quaterthiophene on Potassium Hydrogen Phthalate Single Crystals

et al. 2006

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Hot-wall epitaxy and molecular-beam epitaxy have been employed for growing quaterthiophene thin films on the (010) cleavage face of potassium hydrogen phthalate, and the results are compared in terms of film properties and growth mode. Even if there is no geometrical match between substrate and overlayer lattices, these films are epitaxially oriented. To investigate the physical rationale for this strong orientation effect, optical microscopy, atomic force microscopy, and X-ray diffraction are employed. A clear correlation between the morphology of the thin films and the crystallographic orientation is found. The results are also validated by surface potential calculations, which demonstrate the primary role played by the corrugation of the substrate surface.

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Section: Introductionmentioning

confidence: 99%

Organic−Organic Epitaxy of Incommensurate Systems: Quaterthiophene on Potassium Hydrogen Phthalate Single Crystals

et al. 2006

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“…As the nickel has different oxidation states, the LaNiO 3 phase diagram is dependent on it. So, the adjustment of pressure and temperature should be appropriately made to avoid the film decomposition into NiO and La 2 NiO 4 due to low (high) pressure (temperature) that shift the chemical equilibrium of the oxidation reaction toward lower oxidation states and may reduce the adatoms' mobility resulting in island growth mode that increases the surface roughness and generates more structural defects when lowering the growth temperature [63].…”

Section: Molecular Beam Epitaxymentioning

confidence: 99%

Growth Processing and Strategies: A Way to Improve the Gas Sensing Performance of Nickel Oxide-Based Devices

Ben Arbia,

Comini

2024

Chemosensors

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The review paper provides a comprehensive analysis of nickel oxide (NiO) as an emerging material in environmental monitoring by surveying recent developments primarily within the last three years and reports the growth processing and strategies employed to enhance NiO sensing performance. It covers synthesis methods for pristine NiO, including vapor-phase, liquid-phase, and solution-processing techniques, highlighting advantages and limitations. The growth mechanisms of NiO nanostructures are explored, with a focus on the most recent research studies. Additionally, different strategies to improve the gas sensing performance of NiO are discussed (i.e., surface functionalization by metallic nanoparticles, heterostructure formation, carbon-based nanomaterials, and conducting polymers). The influence of these strategies on selectivity, sensitivity, response time, and stability of NiO-based sensors is thoroughly examined. Finally, the challenges and future directions that may lead to the successful development of highly efficient NiO-based gas sensors for environmental monitoring are introduced in this review.

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“…In the course of the trend of reducing the thickness of the individual layers, the relevance of their interfaces strongly increases. Thanks to the continuous improvements during several decades, interface control with a monolayer range precision has become state of the art for a wide variety of semiconductor materials by employing molecular beam epitaxy (MBE), as well as metal organic vapour phase epitaxy (MOVPE) . Nonetheless, each new material combination may constitute a considerable challenge due to its specific peculiarities concerning interfacial chemistry, e.g.…”

Section: Introductionmentioning

confidence: 99%

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties

Geurts

2014

Phys. Status Solidi B

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This review focuses on the analysis of buried semiconductor interfaces by Raman spectroscopy, i.e. inelastic light scattering. Simultaneous access to structural and electronic properties can be obtained by employing phonon Raman scattering, induced by deformation potential, or alternatively by the electric-field induced Fröhlich mechanism, as well as Raman scattering from coupled plasmon-LO-phonon modes. Structural information may comprise intermixing, reactivity, strain and interfacial atomic bond sequences. The main electronic properties derived from Raman spectroscopy are the doping levels of the constituent layers, the interfacial electric field strengths and the free-carrier depletion layer widths. Attention is paid also to the possibility of in situ growth monitoring by Raman spectroscopy. Examples of semiconductor interface analysis are presented for heterovalent interfaces between II-VI and III-V semiconductors, especially ZnSe/GaAs(001) and CdTe/ InSb(001), as well as for heavily strained CdTe monolayers, embedded in a BeTe epilayer on GaAs(001).

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Molecular Beam Epitaxy

Cited by 56 publications

References 87 publications

Organic−Organic Epitaxy of Incommensurate Systems: Quaterthiophene on Potassium Hydrogen Phthalate Single Crystals

Organic−Organic Epitaxy of Incommensurate Systems: Quaterthiophene on Potassium Hydrogen Phthalate Single Crystals

Growth Processing and Strategies: A Way to Improve the Gas Sensing Performance of Nickel Oxide-Based Devices

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties

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