Characterization of GaAs and AlGaAs Layers Grown by Laser Atomic Layer Epitaxy

Miyoshi, Tadaki; Iwai, Sohachi; Iimura, Yasufumi; Aoyagi, Yoshinobu; Namba, Susumu

doi:10.1143/jjap.29.1435

Jpn. J. Appl. Phys.

1990

DOI: 10.1143/jjap.29.1435

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Characterization of GaAs and AlGaAs Layers Grown by Laser Atomic Layer Epitaxy

Tadaki Miyoshi¹,

Sohachi Iwai

Yasufumi Iimura

et al.

Abstract: Raman spectra were measured at 300 K to characterize GaAs and AlGaAs layers grown by laser atomic layer epitaxy. The quality of the GaAs patterned layer grown by laser scanning was uniform in spite of the laser intensity profile. The molar fraction of Al in the peripheral region of the AlGaAs layer is affected by the intensity profile of the laser beam.

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Cited by 4 publications

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“…The results of the longitudinal and transversal mode measurements are shown in Fig. 1, which confirms the GaAs wafer's single crystal zinc blende structure by the observation of pure transverse optical (TO) and longitudinal optical (LO) peaks located at 268 cm −1 and 292 cm −1 [7]. The PL was excited at 266 nm with a vertically polarized pulsed (11 ns, 22 kHz) solid-state laser from Laserglow Inc., whereas the emission was recorded with Ocean Optics (USB 2000) and StellarNet (C-SR-200) fiber spectrometers.…”

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confidence: 74%

Inherent photoluminescence Stokes shift in GaAs

Singh

Barik

et al. 2015

Opt. Lett.

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The intrinsic photoluminescence Stokes shift, i.e., the energy difference between optical band gap and emission peak, of 350 μm thick semi-insulating GaAs wafers is found to be 4 meV at room temperature. The result is based on the determination of the optical bulk band gap from the transmission trend via modified Urbach rule whose result is confirmed with the transmission derivative method. The findings reveal the detailed balance of the optically evoked transitions and disclose the intrinsic link between Stokes shift and the Urbach tail slope parameter.

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supporting

confidence: 74%

Inherent photoluminescence Stokes shift in GaAs

Singh

Barik

et al. 2015

Opt. Lett.

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Magnetic shielding properties of YBa2Cu3O7−x thick films deposited on silver cylinders with the continuous detonation spray technique

Pavese¹,

Bianco²,

Andreone

et al. 1992

Physica C: Superconductivity

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2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

et al. 2022

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A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro–nano–pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.

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Characterization of GaAs and AlGaAs Layers Grown by Laser Atomic Layer Epitaxy

Cited by 4 publications

References 3 publications

Inherent photoluminescence Stokes shift in GaAs

Inherent photoluminescence Stokes shift in GaAs

Magnetic shielding properties of YBa2Cu3O7−x thick films deposited on silver cylinders with the continuous detonation spray technique

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

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