Black phosphorus is a two-dimensional material of great interest, in part because of its high carrier mobility and thickness dependent direct bandgap. However, its instability under ambient conditions limits material deposition options for device fabrication. Here we show a black phosphorus ink that can be reliably inkjet printed, enabling scalable development of optoelectronic and photonic devices. Our binder-free ink suppresses coffee ring formation through induced recirculating Marangoni flow, and supports excellent consistency (< 2% variation) and spatial uniformity (< 3.4% variation), without substrate pre-treatment. Due to rapid ink drying (< 10 s at < 60 °C), printing causes minimal oxidation. Following encapsulation, the printed black phosphorus is stable against long-term (> 30 days) oxidation. We demonstrate printed black phosphorus as a passive switch for ultrafast lasers, stable against intense irradiation, and as a visible to near-infrared photodetector with high responsivities. Our work highlights the promise of this material as a functional ink platform for printed devices.

We present a self-powered, high-performance graphene-enhanced ultraviolet silicon Schottky photodetector. Different from traditional transparent electrodes, such as indium tin oxides or ultra-thin metals, the unique ultraviolet absorption property of graphene leads to long carrier life time of hot electrons that can contribute to the photocurrent or potential carrier-multiplication. Our proposed structure boosts the internal quantum efficiency over 100%, approaching the upper-limit of silicon-based ultraviolet photodetector. In the near-ultraviolet and mid-ultraviolet spectral region, the proposed ultraviolet photodetector exhibits high performance at zero-biasing (self-powered) mode, including high photo-responsivity (0.2 A W −1 ), fast time response (5 ns), high specific detectivity (1.6 × 10 13 Jones), and internal quantum efficiency greater than 100%. Further, the photo-responsivity is larger than 0.14 A W −1 in wavelength range from 200 to 400 nm, comparable to that of state-of-the-art Si, GaN, SiC Schottky photodetectors. The photodetectors exhibit stable operations in the ambient condition even 2 years after fabrication, showing great potential in practical applications, such as wearable devices, communication, and "dissipation-less" remote sensor networks.

If two-dimensional (2D) nanomaterials are ever to be utilized as components of practical, macroscopic devices on a large scale, there is a complementary need to controllably assemble these 2D building blocks into more sophisticated and hierarchical three-dimensional (3D) architectures. Such a capability is key to design and build complex, functional devices with tailored properties. This review provides a comprehensive overview of the various experimental strategies currently used to fabricate the 3D macro-structures of 2D nanomaterials. Additionally, various approaches for the decoration of the 3D macro-structures with organic molecules, polymers, and inorganic materials are reviewed. Finally, we discuss the applications of 3D macro-structures, especially in the areas of energy, environment, sensing, and electronics, and describe the existing challenges and the outlook for this fast emerging field.

A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro–nano–pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.

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High-performance photodetectors operating over a broad wavelength range from ultraviolet, visible, to infrared are of scientific and technological importance for a wide range of applications. Here, a photodetector based on van der Waals heterostructures of graphene and its fluorine-functionalized derivative is presented. It consistently shows broadband photoresponse from the ultraviolet (255 nm) to the mid-infrared (4.3 µm) wavelengths, with three orders of magnitude enhanced responsivity compared to pristine graphene photodetectors. The broadband photodetection is attributed to the synergistic effects of the spatial nonuniform collective quantum confinement of sp domains, and the trapping of photoexcited charge carriers in the localized states in sp domains. Tunable photoresponse is achieved by controlling the nature of sp sites and the size and fraction of sp /sp domains. In addition, the photoresponse due to the different photoexcited-charge-carrier trapping times in sp and sp nanodomains is determined. The proposed scheme paves the way toward implementing high-performance broadband graphene-based photodetectors.

Graphene (Gr) nanosheets with multilayer structures were dispersed in a nickel (Ni) plating solution by using a surfactant with a magnetic stirring method. Gr nanosheets were incorporated into a Ni matrix through a plating process to form Ni-Gr composites on a target substrate. Gr nanosheets were uniformly dispersed in the Ni matrix, and the oxygen radicals present in the Gr were reduced during the electro-deposition process. The incorporation of Gr in the Ni matrix increases both the inter-planar spacing and the degree of preferred orientation of crystalline Ni. With the addition of Gr content as low as 0.05 g L(-1), the elastic modulus and hardness of the Ni-Gr composites reach 240 GPa and 4.6 GPa, respectively, which are about 1.7 and 1.2 times that of the pure Ni deposited under the same condition. The enhancement in mechanical properties of the composites is attributed to the preferred formation of the Ni crystalline phases in its (111) plane, the high interaction between Ni and Gr and the prevention of the dislocation sliding in the Ni matrix by the Gr. The results suggest that the method of using Gr directly instead of graphene oxide (GO) is efficient and scalable.

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