We present a self-powered, high-performance graphene-enhanced ultraviolet silicon Schottky photodetector. Different from traditional transparent electrodes, such as indium tin oxides or ultra-thin metals, the unique ultraviolet absorption property of graphene leads to long carrier life time of hot electrons that can contribute to the photocurrent or potential carrier-multiplication. Our proposed structure boosts the internal quantum efficiency over 100%, approaching the upper-limit of silicon-based ultraviolet photodetector. In the near-ultraviolet and mid-ultraviolet spectral region, the proposed ultraviolet photodetector exhibits high performance at zero-biasing (self-powered) mode, including high photo-responsivity (0.2 A W −1 ), fast time response (5 ns), high specific detectivity (1.6 × 10 13 Jones), and internal quantum efficiency greater than 100%. Further, the photo-responsivity is larger than 0.14 A W −1 in wavelength range from 200 to 400 nm, comparable to that of state-of-the-art Si, GaN, SiC Schottky photodetectors. The photodetectors exhibit stable operations in the ambient condition even 2 years after fabrication, showing great potential in practical applications, such as wearable devices, communication, and "dissipation-less" remote sensor networks.

Flexible electronics are a very promising technology for various applications. Several types of flexible devices have been developed, but there has been limited research on flexible electromechanical systems (MEMS). Surface acoustic wave (SAW) devices are not only an essential electronic device, but also are the building blocks for sensors and MEMS. Here we report a method of making flexible SAW devices using ZnO nanocrystals deposited on a cheap and bendable plastic film. The flexible SAW devices exhibit two wave modes - the Rayleigh and Lamb waves with resonant frequencies of 198.1 MHz and 447.0 MHz respectively, and signal amplitudes of 18 dB. The flexible devices have a high temperature coefficient of frequency, and are thus useful as sensitive temperature sensors. Moreover, strong acoustic streaming with a velocity of 3.4 cm/s and particle concentration using the SAW have been achieved, demonstrating the great potential for applications in electronics and MEMS.

High-performance photodetectors operating over a broad wavelength range from ultraviolet, visible, to infrared are of scientific and technological importance for a wide range of applications. Here, a photodetector based on van der Waals heterostructures of graphene and its fluorine-functionalized derivative is presented. It consistently shows broadband photoresponse from the ultraviolet (255 nm) to the mid-infrared (4.3 µm) wavelengths, with three orders of magnitude enhanced responsivity compared to pristine graphene photodetectors. The broadband photodetection is attributed to the synergistic effects of the spatial nonuniform collective quantum confinement of sp domains, and the trapping of photoexcited charge carriers in the localized states in sp domains. Tunable photoresponse is achieved by controlling the nature of sp sites and the size and fraction of sp /sp domains. In addition, the photoresponse due to the different photoexcited-charge-carrier trapping times in sp and sp nanodomains is determined. The proposed scheme paves the way toward implementing high-performance broadband graphene-based photodetectors.

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By exploiting the adsorbent gaseous molecules induced changes in intrinsic properties of graphene/silicon (Gr/Si) Schottky junction, we report a sensitive, low-power consuming, multimode environmental sensor. By combining an array of Gr/Si Schottky diodes with a differential amplifier circuit, we are able to not only differentiate the temperature coefficient and humidity sensing, but also monitor the sunlight exposure time. Our device is particularly sensitive towards humidity in both forward and reverse biased, and works in resistive as well as capacitive mode. Sensitivity of our devices reached to 17%, 45%, 26%, and 32% per relative humidity (%RH) for reverse biased, forward biased, resistive, and capacitive modes, respectively. In the reverse mode, the power consumption is as low as 2 nW. Moreover, our sensor response is highly selective, with sensitivity lower than 1% for other gases present in atmosphere including H 2 , O 2 , N 2 , and CO 2. High sensitivity, low-power consumption, multiple operation modes, and high selectivity promises application of our sensor for industrial and home safety, environmental monitoring such as indoor & outdoor air conditions, process monitoring, and others.