A high-performance thermoelectric oxyselenide BiCuSeO ceramic with ZT > 1.1 at 823 K and higher average ZT value (ZTave ≈0.8) is obtained. The heavy doping element and nanostructures can effectively tune its electronic structure, hole concentration, and thermal conductivity, resulting in substantially enhanced mobility, power factor, and thus ZT value. This work provides a path to high-performance thermoelectric ceramics.

A significant enhancement of thermoelectric performance in layered oxyselenides BiCuSeO was achieved. The electrical conductivity and Seebeck coefficient of BiCu(1-x)SeO (x = 0-0.1) indicate that the carriers were introduced in the (Cu(2)Se(2))(2-) layer by Cu deficiencies. The maximum of electrical conductivity is 3 × 10(3) S m(-1) for Bicu(0.975)Seo at 650 °C, much larger than 470 S m(-1) for pristine BiCuSeO. Featured with very low thermal conductivity (∼0.5 W m(-1) K(-1)) and a large Seebeck coefficient (+273 μV K(-1)), ZT at 650 °C is significantly increased from 0.50 for pristine BiCuSeO to 0.81 for BiCu(0.975)SeO by introducing Cu deficiencies, which makes it a promising candidate for medium temperature thermoelectric applications.

The layered oxyselenide BiCuSeO system is known as one of the high‐performance thermoelectric materials with intrinsically low thermal conductivity. By employing atomic, nano‐ to mesoscale structural optimizations, low thermal conductivity coupled with enhanced electrical transport properties can be readily achieved. Upon partial substitution of Bi3+ by Ca2+ and Pb2+, the thermal conductivity can be reduced to as low as 0.5 W m−1 K−1 at 873 K through dual‐atomic point‐defect scattering, while a high power factor of ≈1 × 10−3 W cm−1 K−2 is realized over a broad temperature range from 300 to 873 K. The synergistically optimized power factor and intrinsically low thermal conductivity result in a high ZT value of ≈1.5 at 873 K for Bi0.88Ca0.06Pb0.06CuSeO, a promising candidate for high‐temperature thermoelectric applications. It is envisioned that the all‐scale structural optimization is critical for optimizing the thermoelectricity of quaternary compounds.

The n-type polycrystalline Bi 2 O 2 Se 1Àx Cl x (0≤x≤0.04) samples were fabricated through solid-state reaction followed by spark plasma sintering. The carrier concentration was markedly increased to 1.38910 20 cm À3 by 1.5% Cl doping. The maximum electrical conductivity is 213.0 S/cm for x=0.015 at 823 K, which is much larger than 6.2 S/cm for pristine Bi 2 O 2 Se. Furthermore, the considerable enhancement of the electrical conductivity outweighs the moderate reduction of the Seebeck coefficient by Cl doping, thus contributing to a high power factor of 244.40 lÁWK À2 Ám À1 at 823 K. Coupled with the intrinsically suppressed thermal conductivity originating from the low velocity of sound and Young's modulus, a ZT of 0.23 at 823 K for Bi 2 O 2 Se 0.985 Cl 0.015 was achieved, which is almost threefold the value attained in pristine Bi 2 O 2 Se. It reveals that Se-site doping can be an effective strategy for improving the thermoelectric performance of the layered Bi 2 O 2 Se bulks. K E Y W O R D S doping, electrical conductivity, layered crystal structures, thermoelectric properties, Young's modulus Engineering,