2013
DOI: 10.1002/adma.201301675
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Enhanced Thermoelectric Properties of Pb‐doped BiCuSeO Ceramics

Abstract: A high-performance thermoelectric oxyselenide BiCuSeO ceramic with ZT > 1.1 at 823 K and higher average ZT value (ZTave ≈0.8) is obtained. The heavy doping element and nanostructures can effectively tune its electronic structure, hole concentration, and thermal conductivity, resulting in substantially enhanced mobility, power factor, and thus ZT value. This work provides a path to high-performance thermoelectric ceramics.

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Cited by 236 publications
(192 citation statements)
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“…[80] According to solid state physical principles, the ZT value for bulk mate rials with a single parabolic band (SPB) along a certain direc tion can be given as: [4] The timeline for thermoelectric bulk materials with 2D structures, showing data from a superlattice, [8] SnSe, [11,[19][20][21] Bi 2 Te 3 , [12,14,16,17,[22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41] BiCuSeO, [12,[42][43][44][45][46][47][48][49][50][51][52][53][54][55][56] Na x CoO 2 , [57,58] Ca 3 Co 4 O 9 , [5...…”
Section: Strategies From Artificial Superlatticesmentioning
confidence: 99%
“…[80] According to solid state physical principles, the ZT value for bulk mate rials with a single parabolic band (SPB) along a certain direc tion can be given as: [4] The timeline for thermoelectric bulk materials with 2D structures, showing data from a superlattice, [8] SnSe, [11,[19][20][21] Bi 2 Te 3 , [12,14,16,17,[22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41] BiCuSeO, [12,[42][43][44][45][46][47][48][49][50][51][52][53][54][55][56] Na x CoO 2 , [57,58] Ca 3 Co 4 O 9 , [5...…”
Section: Strategies From Artificial Superlatticesmentioning
confidence: 99%
“…The zT of BiCuSeO has been increased to~1.5 through various approaches (see Fig. 17 b-f) including element doping (Mg, Sr, Ca, Ba, Pb at Bi site, Cu vacancies) [51,53,59,165,166], alloying (S, Te) [167], modulation doping [57] and texture treatment [56]. The findings and design methodology of this material are of valuable significance to investigation on similar layered compounds such as SnSe.…”
Section: Other High-performance Cu-based Chalcogenidesmentioning
confidence: 99%
“…Examples are IIIA elements doping in the rock-salt IV-VI structure and functioning as p-type dopants, [36][37][38][39] and IVA elements in V 2 VI 3 compounds. 40 Pb doping on the Bi-site in BiCuSeO, 41 Sb-doping on the Te-site in CuGaTe 2 , 42 and even antisite defects in ZrNiSn 43 are all known to form resonant levels at the respective band edges, illustrating a variety of resonant levels one can achieve in TE materials.…”
Section: Electrical Transport In Thermoelectricsmentioning
confidence: 99%