Promising Thermoelectric Bulk Materials with 2D Structures

Zhou, Yiming; Zhao, Li‐Dong

doi:10.1002/adma.201702676

Cited by 242 publications

(188 citation statements)

References 123 publications

(144 reference statements)

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“…Figure 5a–c shows the projected crystal structures, high‐resolution spherical aberration corrected high‐angle annular dark‐field scanning transmission electron microscopy (Cs‐HAADF‐STEM) images with multislice simulations, and corresponding selected area electron diffraction (SAED) patterns of SnSe viewed along the a ‐, b ‐ and c ‐axes,206 respectively. SnSe possesses a typical double‐layered structure,10 similar to SnS and black phosphorus 207,208. In a unit cell of SnSe, there are eight atoms joined with strong hetero‐polar bonds, consisting of two planes of zigzag‐like chain 209,210.…”

Section: Fundamentalmentioning

confidence: 99%

“…[198][199][200] the a-, b-and c-axes, [206] respectively. SnSe possesses a typical double-layered structure, [10] similar to SnS and black phosphorus. [207,208] In a unit cell of SnSe, there are eight atoms joined with strong hetero-polar bonds, consisting of two planes of zigzag-like chain.…”

Section: Crystal Structurementioning

confidence: 99%

“…Among the state‐of‐the‐art thermoelectric materials, tin selenide (SnSe) is one of the most promising candidates to apply to thermoelectric devices due to its environmentally friendly feature, high cost‐effectiveness, and outstanding thermoelectric performance derived from its appropriate bandgap of ≈0.9 eV and intrinsic low κ l 9,10 . Figure a shows the development timeline for all SnSe‐based bulk thermoelectric materials,11–124 from which a record high ZT of ≈2.8 at 773 K was found in the n‐type SnSe single crystal,11 derived from its ultralow κ l of ≈0.18 W m −1 K −1 and high S 2 σ of ≈9.0 µW cm −1 K −2 at this temperature 125.…”

Section: Introductionmentioning

confidence: 99%

“…Among the state-of-the-art thermoelectric materials, tin selenide (SnSe) is one of the most promising candidates to apply to thermoelectric devices due to its environmentally friendly feature, high cost-effectiveness, and outstanding thermoelectric performance derived from its appropriate bandgap of ≈0.9 eV and intrinsic low κ l . [9,10] Figure 1a shows the development timeline for all SnSe-based bulk thermoelectric materials, from which a record high ZT of ≈2.8 at 773 K was found in the n-type SnSe single crystal, [11] derived from its ultralow κ l of ≈0.18 W m −1 K −1 and high S 2 σ of ≈9.0 µW cm −1 K −2 at this temperature. [125] Such a high ZT is also very competitive to other state-of-the-art thermoelectric systems which possess ZTs > 2, such as PbTe, [126][127][128][129][130][131][132][133][134] GeTe, [135][136][137][138][139][140][141][142][143][144][145][146][147] Cu 2 Se/Cu 2 S, [148][149][150][151][152][153][154][155][156][157] and AgSbTe 2 .…”

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confidence: 99%

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High‐Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

2020

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Tin selenide (SnSe) is one of the most promising candidates to realize environmentally friendly, cost‐effective, and high‐performance thermoelectrics, derived from its outstanding electrical transport properties by appropriate bandgaps and intrinsic low lattice thermal conductivity from its anharmonic layered structure. Advanced aqueous synthesis possesses various unique advantages including convenient morphology control, exceptional high doping solubility, and distinctive vacancy engineering. Considering that there is an urgent demand for a comprehensive survey on the aqueous synthesis technique applied to thermoelectric SnSe, herein, a thorough overview of aqueous synthesis, characterization, and thermoelectric performance in SnSe is provided. New insights into the aqueous synthesis‐based strategies for improving the performance are provided, including vacancy synergy, crystallization design, solubility breakthrough, and local lattice imperfection engineering, and an attempt to build the inherent links between the aqueous synthesis‐induced structural characteristics and the excellent thermoelectric performance is presented. Furthermore, the significant advantages and potentials of an aqueous synthesis route for fabricating SnSe‐based 2D thermoelectric generators, including nanorods, nanobelts, and nanosheets, are also discussed. Finally, the controversy, strategy, and outlook toward future enhancement of SnSe‐based thermoelectric materials are also provided. This Review guides the design of thermoelectric SnSe with high performance and provides new perspectives as a reference for other thermoelectric systems.

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Section: Fundamentalmentioning

confidence: 99%

Section: Crystal Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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High‐Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

2020

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“…For a detailed survey of TE applications of 2D materials, readers can refer to refs. [39,40]. Our review takes a perspective from the various thermally related issues encountered in FETs based on 2D semiconductors, such as thermal management in the active device regions and interfacial thermal resistance across various contacts and interfaces.…”

Section: Introductionmentioning

confidence: 99%

Thermal Transport in 2D Semiconductors—Considerations for Device Applications

Zhao

Cai

Zhang

et al. 2019

Adv Funct Materials

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The discovery of graphene has stimulated the search for and investigations into other 2D materials because of the rich physics and unusual properties exhibited by many of these layered materials. Transition metal dichalcogenides (TMDs), black phosphorus, and SnSe among many others, have emerged to show highly tunable physical and chemical properties that can be exploited in a whole host of promising applications. Alongside the novel electronic and optical properties of such 2D semiconductors, their thermal transport properties have also attracted substantial attention. Here, a comprehensive review of the unique thermal transport properties of various emerging 2D semiconductors is provided, including TMDs, black‐ and blue‐phosphorene among others, and the different mechanisms underlying their thermal conductivity characteristics. The focus is placed on the phonon‐related phenomena and issues encountered in various applications based on 2D semiconductor materials and their heterostructures, including thermoelectric power generation and electron–phonon coupling effect in photoelectric and thermal transistor devices. A thorough understanding of phonon transport physics in 2D semiconductor materials to inform thermal management of next‐generation nanoelectronic devices is comprehensively presented along with strategies for controlling heat energy transport and conversion.

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High Thermoelectric Performance in Supersaturated Solid Solutions and Nanostructured n‐Type PbTe–GeTe

Luo

Zhang

Hua

et al. 2018

Adv Funct Materials

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Sb-doped and GeTe-alloyed n-type thermoelectric materials that show an excellent figure of merit ZT in the intermediate temperature range (400-800 K) are reported. The synergistic effect of favorable changes to the band structure resulting in high Seebeck coefficient and enhanced phonon scattering by point defects and nanoscale precipitates resulting in reduction of thermal conductivity are demonstrated. The samples can be tuned as single-phase solid solution (SS) or two-phase system with nanoscale precipitates (Nano) based on the annealing processes. The GeTe alloying results in band structure modification by widening the bandgap and increasing the density-ofstates effective mass of PbTe, resulting in significantly enhanced Seebeck coefficients. The nanoscale precipitates can improve the power factor in the low temperature range and further reduce the lattice thermal conductivity (κ lat ). Specifically, the Seebeck coefficient of Pb 0.988 Sb 0.012 Te-13%GeTe-Nano approaches −280 µV K −1 at 673 K with a low κ lat of 0.56 W m −1 K −1 at 573 K. Consequently, a peak ZT value of 1.38 is achieved at 623 K. Moreover, a high average ZT avg value of ≈1.04 is obtained in the temperature range from 300 to 773 K for n-type Pb 0.988 Sb 0.012 Te-13%GeTe-Nano. Microstructure of the Solid Solution SystemMicrostructure information of the Pb 0.988 Sb 0.012 Te-13%GeTe-SS sample is summarized in Figure 2. Figure 2a-c depicts

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Promising Thermoelectric Bulk Materials with 2D Structures

Cited by 242 publications

References 123 publications

High‐Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

High‐Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

Thermal Transport in 2D Semiconductors—Considerations for Device Applications

High Thermoelectric Performance in Supersaturated Solid Solutions and Nanostructured n‐Type PbTe–GeTe

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