Thermoelectric materials generate electric energy from waste heat, with conversion efficiency governed by the dimensionless figure of merit, ZT. Single-crystal tin selenide (SnSe) was discovered to exhibit a high ZT of roughly 2.2–2.6 at 913 K, but more practical and deployable polycrystal versions of the same compound suffer from much poorer overall ZT, thereby thwarting prospects for cost-effective lead-free thermoelectrics. The poor polycrystal bulk performance is attributed to traces of tin oxides covering the surface of SnSe powders, which increases thermal conductivity, reduces electrical conductivity and thereby reduces ZT. Here, we report that hole-doped SnSe polycrystalline samples with reagents carefully purified and tin oxides removed exhibit an ZT of roughly 3.1 at 783 K. Its lattice thermal conductivity is ultralow at roughly 0.07 W m–1 K–1 at 783 K, lower than the single crystals. The path to ultrahigh thermoelectric performance in polycrystalline samples is the proper removal of the deleterious thermally conductive oxides from the surface of SnSe grains. These results could open an era of high-performance practical thermoelectrics from this high-performance material.

Nearly intrinsic charge and thermal transport properties of polycrystalline SnSe materials are unveiled for the first time. We confirm that tin oxide layers on the surface of SnSe powder are the origin of paradoxically higher apparent thermal conductivity in polycrystalline samples over single crystal. Our surface oxide removing strategy on polycrystalline SnSe materials reveals even lower thermal conductivity than single-crystal samples and simultaneously enhances the hole mobility, electrical conductivity, and Seebeck coefficient, leading to an extraordinarily high thermoelectric figure of merit (ZT) of 2.5.

Short-chain fatty acids and their corresponding acyl-CoAs sit at the crossroads of metabolic pathways and play important roles in diverse cellular processes. They are also precursors for protein post-translational lysine acylation modifications. A noteworthy example is the newly identified lysine 2-hydroxyisobutyrylation (K) that is derived from 2-hydroxyisobutyrate and 2-hydroxyisobutyryl-CoA. Histone K has been shown to be associated with active gene expression in spermatogenic cells. However, the key elements that regulate this post-translational lysine acylation pathway remain unknown. This has hindered characterization of the mechanisms by which this modification exerts its biological functions. Here we show that Esa1p in budding yeast and its homologue Tip60 in human could add K to substrate proteins both in vitro and in vivo. In addition, we have identified HDAC2 and HDAC3 as the major enzymes to remove K. Moreover, we report the first global profiling of K proteome in mammalian cells, identifying 6 548 K sites on 1 725 substrate proteins. Our study has thus discovered both the "writers" and "erasers" for histone K marks, and major K protein substrates. These results not only illustrate the landscape of this new lysine acylation pathway, but also open new avenues for studying diverse functions of cellular metabolites associated with this pathway.

Phosphorene, monolayer or few‐layer black phosphorus (BP), has recently triggered strong scientific interest for lithium/sodium ion batteries (LIBs/SIBs) applications. However, there are still challenges regarding large‐scale fabrication, poor air stability. Herein, we report the high‐yield synthesis of phosphorene with good crystallinity and tunable size distributions via liquid‐phase exfoliation of bulk BP in formamide. Afterwards, a densely packed phosphorene–graphene composite (PG‐SPS, a packing density of 0.6 g cm−3) is prepared by a simple and easily up‐scalable spark plasma sintering (SPS) process. When working as anode materials of LIBs, PG‐SPS exhibit much improved first‐cycle Coloumbic efficiency (60.2%) compared to phosphorene (11.5%) and loosely stacked phosphorene–graphene composite (34.3%), high specific capacity (1306.7 mAh g−1) and volumetric capacity (256.4 mAh cm−3), good rate capabilities (e.g., 415.0 mAh g−1 at 10 A g−1) as well as outstanding long‐term cycling life (91.9% retention after 800 cycles at 10 A g−1). Importantly, excellent air stability of PG‐SPS over the 60 days observation in maintaining its high Li storage properties can be achieved. On the contrary, 95.2% of BP in PG sample was oxidized after only 10 days exposure to ambience, leading to severe degradation of electrochemical properties.

Sb 2 Si 2 Te 6 , a 2D material, exhibits an intrinsically high thermoelectric figure of merit ZT of 1.08 at 823 K. The thermoelectric performance can be further enhanced by a cellular nanostructure with ultrathin Si 2 Te 3 nanosheets covering the Sb 2 Si 2 Te 6 grains. The Si 2 Te 3 acts as a hole-transmitting electron-blocking filter and, at the same time, causes extra phonon scattering that leads to ultralow thermal conductivity and a high ZT value of 1.65 at 823 K.

INTRODUCTION It has long been an interesting question whether a living cell can be constructed from scratch in the lab, a goal that may not be realized anytime soon. Nonetheless, with advances in DNA synthesis technology, the complete genetic material of an organism can now be synthesized chemically. Hitherto, genomes of several organisms including viruses, phages, and bacteria have been designed and constructed. These synthetic genomes are able to direct all normal biological functions, capable of self-replication and production of offspring. Several years ago, a group of scientists worldwide formed an international consortium to reconstruct the genome of budding yeast, Saccharomyces cerevisiae . RATIONALE The synthetic yeast genome, designated Sc2.0, was designed according to a set of arbitrary rules, including the elimination of transposable elements and incorporation of specific DNA elements to facilitate further genome manipulation. Among the 16 S. cerevisiae chromosomes, chromosome XII is unique as one of the longest yeast chromosomes (~1 million base pairs) and additionally encodes the highly repetitive ribosomal DNA locus, which forms the well-organized nucleolus. We report on the design, construction, and characterization of chromosome XII, the physically largest chromosome in S. cerevisiae. RESULTS A 976,067–base pair linear chromosome, synXII, was designed based on the native chromosome XII sequence of S. cerevisiae , and chemically synthesized. SynXII was assembled using a two-step method involving, successive megachunk integration to produce six semisynthetic strains, followed by meiotic recombination–mediated assembly, yielding a full-length functional chromosome in S. cerevisiae. Minor growth defect “bugs” detected in synXII were caused by deletion of tRNA genes and were corrected by introducing an ectopic copy of a single tRNA gene. The ribosomal gene cluster (rDNA) on synXII was left intact during the assembly process and subsequently replaced by a modified rDNA unit. The same synthetic rDNA unit was also used to regenerate rDNA at three distinct chromosomal locations. The rDNA signature sequences of the internal transcribed spacer (ITS), often used to determine species identity by standard DNA barcoding procedures, were swapped to generate a Saccharomyces synXII strain that would be identified as S. bayanus. Remarkably, these substantial DNA changes had no detectable phenotypic consequences under various laboratory conditions. CONCLUSION The rDNA locus of synXII is highly plastic; not only can it be moved to other chromosomal loci, it can also be altered in its ITS region to masquerade as a distinct species as defined by DNA barcoding, used widely in taxonomy. The ability to perform “species morphing” reported here presumably reflects the degree of evolutionary flexibility by which these ITS regions change. However, this barcoding region is clearly not infinitely flexible, as only relatively modest intragenus base changes were tolerated. More severe intergenus differences in ITS sequence did not result in functional rDNAs, probably because of defects in rRNA processing. The ability to design, build, and debug a megabase-sized chromosome, together with the flexibility in rDNA locus position, speaks to the remarkable overall flexibility of the yeast genome. Hierarchical assembly and subsequent restructuring of synXII. SynXII was assembled in two steps: First, six semisynthetic synXII strains were built in which segments of native XII DNA were replaced with the corresponding designer sequences. Next, the semisynthetic strains were combined withmultiple rounds ofmating/sporulation, eventually generating a single strain encoding fulllength synXII.The rDNA repeats were removed, modified, and subsequently regenerated at distinct chromosomal locations for species morphing and genome restructuring.

The off-centered Ge leads to the ultralow lattice thermal conductivity and record high average ZT for n-type PbSe.

We investigate the structural and physical properties of the AgSnmSbSem+2 system with m=1-20 (i.e. SnSe matrix and ~5-50 % AgSbSe2) from length scales ranging from atomic, nano and macro. We find the 50:50 composition, with m=1 (i.e. AgSnSbSe3), forms a stable cation disordered cubic rock-salt p-type semiconductor with a special multipeak electronic valence band structure. AgSnSbSe3 has an intrinsically low lattice thermal conductivity of ~0.47 Wm -1 K -1 at 673 K owing to the synergy of cation disorder, phonon anharmonicity, low phonon velocity, and low-frequency optical modes. Furthermore, Te alloying on the Se sites creates a quinary high entropy NaCl-type solid solution AgSnSbSe3-xTex with randomly disordered cations and anions. The extra point defects and lattice dislocations lead to glass-like lattice thermal conductivities of ~0.32 Wm -1 K -1 at 723 K and higher hole carrier concentration than AgSnSbSe3. Concurrently, the Te alloying promotes greater convergence of the multiple valence band maxima in AgSnSbSe1.5Te1.5, the composition with the highest configurational entropy. Facilitated by these favorable modifications, we achieve a high average power factor of ~9.54 μWcm -1 K -2 (400-773 K), a peak thermoelectric figure of merit ZT of 1.14 at 723 K and a high average ZT of ~1.0 over a wide temperature range of 400-773 K in AgSnSbSe1.5Te1.5.