Stepwise Monolayer Growth of GaAs by Pulsed Laser Metal Organic Vapor Phase Epitaxy

Pyrolytic dissociation of trimethylgallium (TMGa) on Si, Au, and Al substrates was studied at various temperatures from 80 to 670 K by x-ray photoelectron spectroscopy of Ga (3d) and C (1s). The intensity and band profile of carbon and gallium signals from TMGa adsorbed on the substrates were measured. The results indicate that TMGa on Si (111) dissociates into Ga and CH3 on the substrate even at 200 K and CH3 further dissociates into C, CH, and CH2 at higher temperatures. Most carbon and gallium species remain on the Si substrate. Carbon species leave the Au and Al substrate but Ga remains on the surface. The pyrolysis of TMGa on GaAs (100), Si (111), and Si (100) substrates is compared and the mechanism of carbon incorporation in photolysis and pyrolysis is discussed. Photodissociation of a monolayer of TMGa on Si and Au is observed with an incident wavelength of 266 nm; direct absorption by the adsorbed molecules occurs at this wavelength. At 355 nm, photodissociation does not occur.

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Laser-assisted metalorganic molecular beam epitaxy of GaAs

Donnelly

Beggy

et al. 1988

Applied Physics Letters

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We report preliminary studies of the growth of homoepitaxial GaAs by laser-assisted metalorganic molecular beam epitaxy, using triethylgallium (TEGa) and As4 sources and a 193 nm ArF excimer laser. Laser irradiation results in a high, selective-area growth rate at temperatures below 450 °C, where pyrolytic growth is very slow. The process is extremely efficient, with roughly unit probability for impinging TEGa molecules sticking and being dissociated by laser radiation to form GaAs. From the strong dependence on laser fluence, the growth enhancement process appears to be pyrolytic in nature (because of transient heating by the pulsed laser) and not photolytic. The cross section for photolysis must be at least ten times lower than the gas-phase value (9×10−18 cm2). The surface morphology of films grown at 400 °C is rough at threshold fluences (∼0.10 J/cm2), but becomes smooth at higher fluences (∼0.13 J/cm2). These regions with relatively smooth surfaces exhibit enhanced photoluminescence yields compared to areas receiving less intense laser radiation.

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Stepwise Monolayer Growth of GaAs by Pulsed Laser Metal Organic Vapor Phase Epitaxy

Cited by 6 publications

References 4 publications

Ultraviolet and infrared absorption spectra of promising organoarsine photochemical vapor deposition reagents

Ultraviolet and infrared absorption spectra of promising organoarsine photochemical vapor deposition reagents

Pyrolytic and photolytic dissociation of trimethylgallium on Si and Au substrates

Laser-assisted metalorganic molecular beam epitaxy of GaAs

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