Hydrogen adsorption on the c(4ϫ4), ͑2ϫ4͒, ͑2ϫ6͒, and ͑4ϫ2͒ reconstructions of GaAs ͑001͒ have been characterized by internal-reflection infrared spectroscopy. The infrared spectra contain up to 15 bands due to the stretching vibrations of arsenic hydrides ͑2150-1950 cm Ϫ1 ͒, terminal gallium hydrides ͑1950-1800 cm Ϫ1 ͒, and bridging gallium hydrides ͑1800-950 cm Ϫ1 ͒. These features arise from hydrogen adsorption on arsenic and gallium dimers, and second-layer arsenic and gallium atoms. The large number of peaks observed indicates that the surface atoms exist in a variety of different chemical environments.