Status and prospects of plasma-assisted atomic layer deposition

Knoops, Hcm Harm; Faraz, Tahsin; Arts, Karsten; Kessels, Erwin

doi:10.1116/1.5088582

Cited by 167 publications

(145 citation statements)

References 246 publications

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“…Hence, the atomic layer deposition (ALD) technique is a forerunner among other deposition techniques that meets these specifications while providing excellent thickness controllability. Plasma-enhanced ALD (PEALD) provides the plasma radicals required to push the boundaries of ALD reactions towards a lower temperature but sensitive substrates can suffer from plasma-induced damage [7]. PEALD has a relatively poor conformal deposition on complicated 3D nano-structures compared to thermal ALD.…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Jung

Hwang

et al. 2020

Materials

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Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition temperature of 300 °C and, also exhibits a low impurity concentration in as-deposited films. Low temperature AlN films deposited at 225 °C with a capping layer had an Al to N composition ratio of 1:1.1, a close to ideal composition ratio, with a low oxygen content (7.5%) while exhibiting a GPC of 0.16 nm/cycle. We suggest that N2H4 as a replacement for NH3 is a good alternative due to its stringent thermal budget.

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Section: Introductionmentioning

confidence: 99%

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Jung

Hwang

et al. 2020

Materials

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“…A plasma, generated using (one of) the precursors, is an effective source of radicals. Plasma-enhanced ALD (PEALD) has been successfully used to deposit a variety of elemental and compound thin films (see for example, a review by Knoops et al and the references therein 109 ).…”

Section: Basic Concepts Of Aldmentioning

confidence: 99%

From radical-enhanced to pure thermal ALD of gallium and aluminium nitrides

Banerjee¹

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Contents xi 6.3 High-pressure (HP) ALD………………………………………………….… 6.3.1 Dependence of incubation time on surface termination…………...… 6.3.2 Control experiments showing the role of-NH terminations and the effect of plasma………………………………………………….…… 6.4 Investigation into the growth on Si and AlN substrates by in-situ SE…….… 6.4.1 The incubation stage……………………………………………….… 6.4.2 The stage of increasing step height…………………………...……… 6.4.3 The stage of stable step height……………………………………..… 6.5 Towards thermal ASALD of GaN………………………………………...… 6.5.1 ALD on patterned AlN /SiO 2 substrate……………………………… 6.5.2 ALD on patterned Si 3 N 4 / SiO 2 / Si substrate …………………..…… 6.6 Conclusions………………………………………………………………..… References………………………………………………………………….……… Appendix 6.1: Wet etching of ALD (Al)GaN layers………………………...… Appendix 6.2: Scanning electron microscope images of GaN ALD performed on the ex-situ patterned AlN/SiO 2 substrate…………………… 7 Thermal ALD of AlN and estimation of layer coalescence…………..… 163 7.1 Introduction………………………………………………………………….. 7.2 Why ALD does not necessarily imply a coalesced layer……………….…… 7.2.1 Types of initial growth in ALD processes…………………………… 7.

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“…PEALD is a deposition technique widely used today to grow ultra-thin films of various materials other than TiO 2 , and the benefits and challenges associated with this technique have been addressed in two review articles published in 2011 [104] and 2019 [105]. Niemelä et al published another extensive review dedicated solely to TiO 2 thin films deposited using ALD techniques, including PEALD [106].…”

Section: Plasma-enhanced Atomic Layer Depositionmentioning

confidence: 99%

Atmospheric Pressure Plasma Deposition of TiO2: A Review

et al. 2020

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Atmospheric pressure plasma (APP) deposition techniques are useful today because of their simplicity and their time and cost savings, particularly for growth of oxide films. Among the oxide materials, titanium dioxide (TiO2) has a wide range of applications in electronics, solar cells, and photocatalysis, which has made it an extremely popular research topic for decades. Here, we provide an overview of non-thermal APP deposition techniques for TiO2 thin film, some historical background, and some very recent findings and developments. First, we define non-thermal plasma, and then we describe the advantages of APP deposition. In addition, we explain the importance of TiO2 and then describe briefly the three deposition techniques used to date. We also compare the structural, electronic, and optical properties of TiO2 films deposited by different APP methods. Lastly, we examine the status of current research related to the effects of such deposition parameters as plasma power, feed gas, bias voltage, gas flow rate, and substrate temperature on the deposition rate, crystal phase, and other film properties. The examples given cover the most common APP deposition techniques for TiO2 growth to understand their advantages for specific applications. In addition, we discuss the important challenges that APP deposition is facing in this rapidly growing field.

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Status and prospects of plasma-assisted atomic layer deposition

Cited by 167 publications

References 246 publications

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

From radical-enhanced to pure thermal ALD of gallium and aluminium nitrides

Atmospheric Pressure Plasma Deposition of TiO2: A Review

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