Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Jung, Yong Chan; Hwang, Su Min; Le, Dan N.; Kondusamy, Aswin L. N.; Mohan, Jaidah; Kim, Sang Woo; Kim, Jin Hyun; Lucero, Antonio T.; Ravichandran, Arul Vigneswar; Kim, Harrison Sejoon; Kim, Si Joon; Choi, Rino; Ahn, Jinho; Álvarez, Daniel; Spiegelman, Jeffrey; Kim, Jiyoung

doi:10.3390/ma13153387

Cited by 14 publications

(8 citation statements)

References 42 publications

(72 reference statements)

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“…Recently, Kim et al obtained a substantially higher GPC, namely >3 Å per cycle at 350 °C when using TMA and N 2 H 4 . 33 In view of the overall higher reactivity of hydrazine derivatives compared to that of hydrazine an increase in the GPC was expected for MMH; however, in our experiments we were unable to reach their values. It is known that hydrazine methyl-derivatives decompose at 200-300 °C through a radical formation mechanism.…”

Section: Film Growthcontrasting

confidence: 53%

Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine

et al. 2021

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Section: Film Growthcontrasting

confidence: 53%

Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine

et al. 2021

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“…Besides this classic set of precursors, other precursors and combinations have been introduced. Alternative nitrogen precursors are forming gas (N 2 + H 2 ), ,− hydrazine (N 2 H 4 ), − hydrazinium chloride (N 2 H 5 Cl), and monomethyl hydrazine (N 2 CH 6 ) . Alternative metal precursors are AlCl 3 , ,− TEA, , TMAA, , TDMAA, ,− DMEAA, − TDEAA, TiBA, and DMAA .…”

Section: Introductionmentioning

confidence: 99%

Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Aluminum Nitride

van der Wel,

van der Zouw,

Aarnink

et al. 2023

J. Phys. Chem. C

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This work demonstrates intrinsic area-selective deposition of AlN films by thermal atomic layer deposition (ALD). Using sequential pulses of trimethylaluminum and NH 3 at a substrate temperature of 623 K, polycrystalline AlN was selectively formed on a thin layer of sputtered AlN that was patterned on thermal SiO 2 grown on Si substrates. A pretreatment to remove native AlO x N y facilitated the selective growth of ALD-AlN. Transmission electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and atomic force microscopy examined the interfaces and layer thickness. As reported in this article, the deposition of AlN exhibits intrinsic selectivity, a trait that can be exploited to grow other III-nitrides selectively, such as GaN.

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“…To maximize the growth rate of a thin film, a precursor must be sufficiently volatile and have ligands of low steric bulk for fast surface saturation and maximum density of the deposited precursor. Due to its high volatility and reactivity, trimethylaluminum (AlMe 3 ) has been used to deposit AlN by ALD. − These films contain high levels of carbon impurities due to the strong Al–C bonds, making it difficult to remove all of the methyl ligands of the deposited precursor at low temperatures. , Replacing the Al–C of AlMe 3 with more reactive Al–N bonds has led to homoleptic tricoordinated amide precursors (Al(NMe 2 ) 3 ) and (Al(NEt 2 ) 3 ), which have been used to deposit AlN by ALD. − Although these precursors are highly volatile and reactive, the low thermal stability of the deposited surface species renders films with carbon impurities…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Thermal Study of Hexacoordinated Aluminum(III) Triazenides for Use in Atomic Layer Deposition

et al. 2021

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Amidinate and guanidinate ligands have been used extensively to produce volatile and thermally stable precursors for atomic layer deposition. The triazenide ligand is relatively unexplored as an alternative ligand system. Herein, we present six new Al(III) complexes bearing three sets of a 1,3-dialkyltriazenide ligand. These complexes volatilize quantitatively in a single step with onset volatilization temperatures of ∼150 °C and 1 Torr vapor pressures of ∼134 °C. Differential scanning calorimetry revealed that these Al(III) complexes exhibited exothermic events that overlapped with the temperatures of their mass loss events in thermogravimetric analysis. Using quantum chemical density functional theory computations, we found a decomposition pathway that transforms the relatively large hexacoordinated Al(III) precursor into a smaller dicoordinated complex. The pathway relies on previously unexplored interligand proton migrations. These new Al(III) triazenides provide a series of alternative precursors with unique thermal properties that could be highly advantageous for vapor deposition processes of Al containing materials.

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Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Cited by 14 publications

References 42 publications

Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine

Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine

Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Aluminum Nitride

Synthesis and Thermal Study of Hexacoordinated Aluminum(III) Triazenides for Use in Atomic Layer Deposition

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