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Plasma-enhanced atomic layer deposition (PEALD) has obtained a prominent position in the synthesis of nanoscale films with precise growth control. Apart from the well-established contribution of highly reactive neutral radicals towards film growth in PEALD, the ions generated by the plasma can also play a significant role. In this work, we report on the measurements of ion energy and flux characteristics on grounded and biased substrates during plasma exposure to investigate their role in tailoring material properties. Insights from such measurements are essential toward understanding how a given PEALD process at different operating conditions can be influenced by energetic ions. Ion flux-energy distribution functions (IFEDFs) of reactive plasmas typically used for PEALD (O 2 , H 2 , N 2 ) were measured in a commercial 200 mm remote inductively coupled plasma ALD system equipped with RF substrate biasing. IFEDFs were obtained using a gridded retarding field energy analyzer and the effect of varying ICP power, pressure and bias conditions on the ion energy and flux characteristics of the three reactive plasmas were investigated. The properties of three material examples-TiO x , HfN x and SiN x -deposited using these plasmas were investigated on the basis of the energy and flux parameters derived from IFEDFs. Material properties were analyzed in terms of the total ion energy dose delivered to a growing film in every ALD cycle, which is a product of the mean ion energy, total ion flux and plasma exposure time. The properties responded differently to the ion energy dose depending on whether it was controlled with RF substrate biasing where ion energy was enhanced, or without any biasing where plasma exposure time was increased. This indicated that material properties were influenced by whether or not ion energies exceeded energy barriers related to physical atom displacement or activation of ion-induced chemical reactions during PEALD. Furthermore, once ion energies were enhanced beyond these threshold barriers with RF substrate biasing, material properties became a function of both the enhanced ion energy and the duration for which the ion energy was enhanced during plasma exposure. These results have led to a better insight into the relation between energetic ions and the ensuing material properties, e.g. by providing energy maps of material properties in terms of the ion energy dose during PEALD. It serves to demonstrate how the measurement and control of ion energy and flux characteristics during PEALD can provide a platform for synthesizing nanoscale films with the desired material properties.

Surface recombination of plasma radicals is generally considered to limit film conformality during plasma-assisted atomic layer deposition (ALD). Here, we experimentally studied film penetration into high-aspect-ratio structures and demonstrated that it can give direct information on the recombination probability r of plasma radicals on the growth surface. This is shown for recombination of oxygen (O) atoms on SiO2, TiO2, Al2O3, and HfO2 where a strong material dependence has been observed. Using extended plasma exposures, films of SiO2 and TiO2 penetrated extremely deep up to an aspect ratio (AR) of ∼900, and similar surface recombination probabilities of r = (6 ± 2) × 10–5 and (7 ± 4) × 10–5 were determined for these processes. Growth of Al2O3 and HfO2 was conformal up to depths corresponding to ARs of ∼80 and ∼40, with r estimated at (1–10) × 10–3 and (0.1–10) × 10–2, respectively. Such quantitative insight into surface recombination, as provided by our method, is essential for modeling radical-surface interaction and understanding for which materials and conditions conformal film growth is feasible by plasma-assisted ALD.

This work provides evidence that plasma-assisted atomic layer deposition (ALD) of SiO2, a widely applied process and a cornerstone in self-aligned multiple patterning, is strongly influenced by ions even under mild plasma conditions with low-energy ions. In two complementary experimental approaches, plasma ALD of SiO2 is investigated with and without

Atomic layer deposition (ALD) can provide nanometer-thin films with excellent conformality on demanding three-dimensional (3D) substrates. This also holds for plasma-assisted ALD, provided that the loss of reactive radicals through surface recombination is sufficiently low. In this work, we determine the surface recombination probability r of oxygen radicals during plasma ALD of SiO 2 and TiO 2 for substrate temperatures from 100 to ∼240 °C and plasma pressures from 12 to 130 mTorr (for SiO 2 ). For both processes, the determined values of r are very low, i.e., ∼10 –4 or lower, and decrease with temperature and pressure down to ∼10 –5 within the studied ranges. Accordingly, deposition on trench structures with aspect ratios (ARs) of <200 is typically not significantly limited by recombination and obtaining excellent film conformality is relatively facile. For higher AR values, e.g., approaching 1000, the plasma time needed to reach saturation increases exponentially and becomes increasingly dependent on the process conditions and the corresponding value of r . Similar dependence on process conditions can be present for plasma ALD of other materials as well, where, in certain cases, film growth is already recombination-limited for AR values of ∼10. Radical recombination data and trends as provided by this work are valuable for optimizing plasma ALD throughput and feasibility for high-AR applications and can also serve as input for modeling of radical recombination mechanisms.

Unparalleled conformality is driving ever new applications for atomic layer deposition (ALD), a thin film growth method based on repeated self-terminating gas-solid reactions. In this work, we re-implemented a diffusion-reaction...

Using an inductively coupled plasma, hydrogenated amorphous silicon (a-Si:H) films have been prepared at very low temperatures (&lt;50 °C) to provide crystalline silicon (c-Si) surface passivation. Despite the limited nanostructural quality of the a-Si:H bulk, a surprisingly high minority carrier lifetime of ∼4 ms is demonstrated after a rapid thermal annealing treatment. Besides the excellent level of surface passivation, the main advantage of the low-temperature approach is the facile suppression of undesired epitaxial growth. The correlation between the a-Si:H nanostructure and the activation of a-Si:H/c-Si interface passivation, upon annealing, has been studied in detail. This yields a structural model that qualitatively describes the different processes that take place in the a-Si:H films during annealing. The presented experimental findings and insights can prove to be useful in the further development of very thin a-Si:H passivation layers for use in silicon heterojunction solar cells.