Some reliability considerations pertaining to LSI technology

Schlacter, M.; Keen, R.S.; Schnable, G. L.

doi:10.1109/jssc.1971.1050195

Cited by 8 publications

(2 citation statements)

References 25 publications

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“…Despite the sources of variation discussed above for our results, a definite trend emerges from the plots in Fig. 3, Various studies involving atmospheric pressure chemical vapor deposition (APCVD) reported that the P S G film coverage exhibited a more p r o n o u n c e d reentrant profile (i.e., a decrease in O) with an increase of t/h (1,3,4,(12)(13)(14). In other A P C V D studies (5, 7), the stepcoverage angle @ was reported to increase up to 90 ~ as t/h was increased to unity, but remained at 90 ~ w h e n t/h was increased further.…”

Section: Resultsmentioning

confidence: 58%

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Dry Etch‐Back of Overthick PSG Films for Step‐Coverage Improvement

Mercier¹,

Naguib²,

Ho³

et al. 1985

J. Electrochem. Soc.

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In this article, we present the results of a study initiated to improve the step coverage of phosphosilicate glass (PSG) obtained with a low temperature LPCVD process and intended for use in VLSI multilevel interconnect structures. It is shown that increasing the PSG film thickness leads to a substantial improvement in the PSG step‐coverage profile, but could create problems for subsequent patterning steps. We have alleviated these problems through the use of dry etching to reduce the thickness of these films to values more compatible with VLSI multilevel interconnect technology, while successfully maintaining the superior step‐coverage profile obtained with the thicker PSG films.

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Section: Resultsmentioning

confidence: 58%

“…Manuscript submitted Sept. 13, 1984; revised manuscript received Jan. 4, 1985. Northern Telecom Electronics Limited assisted in meeting the publication costs of this article.…”

Section: Acknowledgmentsmentioning

confidence: 99%