Radioisotopes were used to determine the surface concentrations of metallic impurities introduced on mechanically polished Ge surfaces during acid clean-up etching and jet electrodeposition. Reagent grade chemicals, to which were added radioactive metallic ions in the concentration range below 1 ppm, were used in the experiments. Surface coverage ranged from fractional monolayers in acid etching to several monolayers in jet electrolysis. In jet electrodeposition, autoradiograms revealed that noble metal impurities are chemically plated onto Ge electrodes, the distribution being a function of the hydrodynamic flow pattern, but independent of current density. The strong influence of these metallic impurities on the reverse I-V characteristics of surface barrier diodes is due to a p-type channel.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 155.97.178.73 Downloaded on 2014-12-01 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 155.97.178.73 Downloaded on 2014-12-01 to IP
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