Solution processed near‐infrared photodetectors using hybrid MoS2-P(Py-co-OT) composite films

Badahdah, H.; Kutbee, Arwa T.; Katowah, Dina F.; Hussein, Mahmoud A.; Al-Ahmadi, Noorah Ahmed; Al-Tuwirqi, Reem M.; Al-Jawhari, Hala

doi:10.1016/j.materresbull.2021.111229

Cited by 11 publications

(4 citation statements)

References 32 publications

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“…The strong photoresponse at 1300 nm implies that it can be used for O-band fiber optic in optical communication applications . The following expressions are used to evaluate a photodetector performance: external 0.25em quantum 0.25em efficiency 0.25em ( EQE ) = h c R e λ responsivity 0.25em ( R ) = | I ph / false( P × S false) | photocurrent 0.25em ( I ph ) = I normall − I normald detectivity 0.25em ( D * ) = S 1 / 2 R false( 2 e I normald false) 1 / 2 where e , c , and h are the electron charge constant, speed of light, and Planck’s constant, respectively, and I d and I l are the dark current and light-on current, respectively. The wavelength, light intensity, and effective area are λ, P , and S (∼24 μm 2 ), respectively.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…The strong photoresponse at 1300 nm implies that it can be used for O-band fiber optic in optical communication applications. 25 The following expressions are used to evaluate a photodetector performance: 26 where e , c , and h are the electron charge constant, speed of light, and Planck’s constant, respectively, and I d and I l are the dark current and light-on current, respectively. The wavelength, light intensity, and effective area are λ, P , and S (∼24 μm 2 ), respectively.…”

Section: Resultsmentioning

confidence: 99%

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Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction

et al. 2022

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As a new class of two-dimensional (2D) materials and a group-VI chalcogen, tellurium (Te) has emerged as a p-type semiconductor with high carrier mobility. Potential applications include high-speed opto-electronic devices for communication. One method to enhance the performance of 2D material-based photodetectors is by integration with a IV group of semiconductors such as silicon (Si). In this work, we demonstrate a self-powered, high-speed, broadband photodetector based on the 2D Te/n-type Si heterojunction. The fabricated Te/n-type Si heterojunction exhibits high performance in the UV−vis−NIR light with a high responsivity of up to ∼250 mA/W and a photocurrent-to-dark current ratio (I on /I off ) of ∼10 6 , fast response time of 8.6 μs, and superior repeatability and stability. The results show that the fabricated Te/n-type Si heterojunction photodetector has a strong potential to be utilized in ultrafast, broadband, and efficient photodetection applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction

et al. 2022

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“…Up to date, a significant number of researches have been performed to develop broadband photodetectors based on MoS 2 , and introducing a near-infrared sensitizing layer into MoS 2 -based devices is one of the simple and effective ways to achieve broadband photodetection. [42][43][44][45][46][47][48] Poly(diketopyrrolopyrrolothiophene) (PDPP3T) is a narrow bandgap organic semiconductor that exhibits a sensitive photo response in the near-infrared region. Moreover, PDPP3T is also solution-processable, which is advantageous for fabricating flexible devices.…”

Section: Introductionmentioning

confidence: 99%

UV to NIR Broadband Flexible Photodetector Based on Solution‐Processed MoS₂/PDPP3T Inorganic–Organic Hybrid Heterostructures

Tang,

Du,

Xie

et al. 2024

Adv Materials Inter

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Molybdenum disulfide (MoS2) is a 2D material with excellent electrical and optical properties, and developing a universal technology for the preparation of high‐performance MoS2‐based photodetector is extremely desirable. Here, a UV to NIR broadband flexible photodetector based on MoS2/(PDPP3T) inorganic–organic hybrid heterostructures is reported. In the experiment, high crystalline 2H‐phase few‐layer MoS2 nanoflakes are first prepared by optimized electrochemical intercalation of tetraheptylammonium cation (THA+) and ultrasound‐assisted exfoliation strategy. Thereafter, a narrow bandgap organic semiconductor PDPP3T is introduced to construct the MoS2/Poly(diketopyrrolopyrrolothiophrn) (PDPP3T) heterojunction. Experimental results reveal that the photodetector can have broadband photo response from 380 to 980 nm. Meanwhile, excellent responsivities and detectivity of 12.4 mA W−1, 2.2 × 1010 Jones at 380 nm and 0.1 mA W−1 and 5 × 108 Jones at 980 nm are achieved, which are ≈10 (UV band)/100 (NIR band) times high than that obtained on the pure MoS2‐based detector. Moreover, the flexibility of the device is investigated by conformal covering the device on a curved surface (R = 5 and 2.5 mm), it shows that the photo response remains almost the same as that measured on the planar substrate, indicating the possible application in the wearable electronics.

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Modulating the detection performance of solution processed stacked multilayer-MoS2 photodetectors upon ultraviolet–ozone surface treatment

et al. 2022

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Solution processed near‐infrared photodetectors using hybrid MoS2-P(Py-co-OT) composite films

Cited by 11 publications

References 32 publications

Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction

Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction

UV to NIR Broadband Flexible Photodetector Based on Solution‐Processed MoS₂/PDPP3T Inorganic–Organic Hybrid Heterostructures

Modulating the detection performance of solution processed stacked multilayer-MoS2 photodetectors upon ultraviolet–ozone surface treatment

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Solution processed near‐infrared photodetectors using hybrid MoS2-P(Py-co-OT) composite films

Cited by 11 publications

References 32 publications

Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction

Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction

UV to NIR Broadband Flexible Photodetector Based on Solution‐Processed MoS2/PDPP3T Inorganic–Organic Hybrid Heterostructures

Modulating the detection performance of solution processed stacked multilayer-MoS2 photodetectors upon ultraviolet–ozone surface treatment

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Product

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UV to NIR Broadband Flexible Photodetector Based on Solution‐Processed MoS₂/PDPP3T Inorganic–Organic Hybrid Heterostructures