UV to NIR Broadband Flexible Photodetector Based on Solution‐Processed MoS₂/PDPP3T Inorganic–Organic Hybrid Heterostructures

Abstract

Molybdenum disulfide (MoS2) is a 2D material with excellent electrical and optical properties, and developing a universal technology for the preparation of high‐performance MoS2‐based photodetector is extremely desirable. Here, a UV to NIR broadband flexible photodetector based on MoS2/(PDPP3T) inorganic–organic hybrid heterostructures is reported. In the experiment, high crystalline 2H‐phase few‐layer MoS2 nanoflakes are first prepared by optimized electrochemical intercalation of tetraheptylammonium cation (THA+) and ultrasound‐assisted exfoliation strategy. Thereafter, a narrow bandgap organic semiconductor PDPP3T is introduced to construct the MoS2/Poly(diketopyrrolopyrrolothiophrn) (PDPP3T) heterojunction. Experimental results reveal that the photodetector can have broadband photo response from 380 to 980 nm. Meanwhile, excellent responsivities and detectivity of 12.4 mA W−1, 2.2 × 1010 Jones at 380 nm and 0.1 mA W−1 and 5 × 108 Jones at 980 nm are achieved, which are ≈10 (UV band)/100 (NIR band) times high than that obtained on the pure MoS2‐based detector. Moreover, the flexibility of the device is investigated by conformal covering the device on a curved surface (R = 5 and 2.5 mm), it shows that the photo response remains almost the same as that measured on the planar substrate, indicating the possible application in the wearable electronics.

Strong Covalent Coupling in Vertically Layered SnSe2/PTAA Heterojunctions Enabled High Performance Inorganic–Organic Hybrid Photodetectors

“…The performances of the recently reported heterostructure based-PDs are summarized in Table . The key performance parameters of our SnSe 2 /PTAA hybrid PDs are comparable or superior to other heterostructured PDs. ,− Furthermore, we also fabricated SnSe 2 PDs without the annealing (H 2 Se atmosphere) process for comparison (Figure e). The photoresponse is shown in Figure f–h.…”