Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction

Abstract

As a new class of two-dimensional (2D) materials and a group-VI chalcogen, tellurium (Te) has emerged as a p-type semiconductor with high carrier mobility. Potential applications include high-speed opto-electronic devices for communication. One method to enhance the performance of 2D material-based photodetectors is by integration with a IV group of semiconductors such as silicon (Si). In this work, we demonstrate a self-powered, high-speed, broadband photodetector based on the 2D Te/n-type Si heterojunction. The fabricated Te/n-type Si heterojunction exhibits high performance in the UV−vis−NIR light with a high responsivity of up to ∼250 mA/W and a photocurrent-to-dark current ratio (I on /I off ) of ∼10 6 , fast response time of 8.6 μs, and superior repeatability and stability. The results show that the fabricated Te/n-type Si heterojunction photodetector has a strong potential to be utilized in ultrafast, broadband, and efficient photodetection applications.

Multilayer WSe2/ZnO heterojunctions for self-powered, broadband, and high-speed photodetectors

“…The I-t characteristics of the WSe 2 /ZnO device at λ = 300 nm over several light intensities of ∼2 to ∼42 μW cm -2 at zero bias are illustrated in figure 2(d). With increasing light intensity from 2 to 42 μW cm −2 , the photocurrent amplitude increases linearly (figure 2(e)), which is consistent with earlier findings [9,10]. The photoresponsivity (R) and detectivity (D * ) of the WSe 2 /ZnO heterojunction versus light intensity at λ = 300 nm are shown in figure 2(f).…”

“…The photoresponsivity (R) and detectivity (D * ) of the WSe 2 /ZnO heterojunction versus light intensity at λ = 300 nm are shown in figure 2(f). Both responsivity and detectivity decrease as the light intensity increases which may be due to higher carrier recombination at higher light intensities [10]. The maximum photoresponsivity and detectivity are ∼131 mA W −1 and ∼3.92 × 10 10 Jones at the wavelength of λ = 300 nm with a light intensity of ∼2 μW cm −2 at zero bias.…”

“…limiting their performance in terms of dark current [6], circuit noise [7], and power consumption [8]. On the other hand, self-powered photodetectors (SPPDs) can detect the optical signals without applying an external bias voltage based on three mechanisms: (I) photovoltaic effect in the p-n or the Schottky junction-based photodetectors [9,10]; (II) pyrophototronic effect in the pyroelectric-based photodetectors [4]; (III) tribo-phototronic effect in the triboelectric nanogenerators [11]. SPPDs have a wide range of applications such as solar cell technology [9], gas sensors [12,13], and remote sensing [14].…”

Semitransparent Solar Cells Employing n-Type Graphene on LaVO3

“…On the other hand, graphene (Gr) with perfect light T , high carrier mobility, thermal stability, and excellent conductivity has recently been spotlighted as a next-generation transparent conductive electrode (TCE). − If Gr TCE is used in semitransparent solar cells, the aperture ratio can be increased while being visually transparent. Although pristine-Gr shows excellent T in the 300–1000 nm region compared to conventional TCO, it has limitations in high-performance semitransparent solar cells due to its low conductivity.…”

Illumination-Dependent I-V Characteristics of MgF2/Al Multilayered Photodetector

“…[1][2][3] In recent years, the development and construction of photodetectors using new materials and structure combinations have received substantial attention. [4][5][6][7][8] Among these materials, multilayer heterostructure photodiodes have emerged as promising candidates due to their unique design and superior performance characteristics. [9][10][11][12] The key advantage of multilayered photodetectors lies in their ability to efficiently absorb light across a broader range of wavelengths.…”