Slow‐mode degradation mechanism and its control in new bright and long‐lived ZnSe white LEDs

Abstract

This paper presents slow-mode degradation mechanism of ZnSe-based white LEDs. A systematic study has been made from a viewpoint of microscopic point defect reaction such as generation and migration in both device active layer (ZnCdSe/ZnSe MQW) and p-type ZnMgSSe cladding layer utilizing DLTS/ ICTS, SSRM (scanning spreading resistance microscope), and EL (electroluminescence)-imaging techniques, coupled with device aging experiments. We have found two different degradation stages (1st and 2nd stages) in the slow-mode degradation, which are caused by quite different microscopic point defect species. The 1st stage is induced by the long-diffusion of H0-center (nitrogen-complex deep hole trap in p-cladding layer), forming high-density dark-spots in the MQW active layer. This active center is generated only in the stress-stimulated condition such as thermal or device fabrication process. After controlling the initial concentration of the H0 center, we have observed no detectable new dark-spots during device operation, leading to fairly long device-lifetime (~1000 h). This 2nd stage has appeared as a carrier (hole) reduction in the p-type cladding layer. This final degradation stage is found to take place by an increase of shallow compensating donor-like centers in p-type cladding layer (ZnMgSSe). Based on these insights on the microscopic point defect reaction, we have developed (new) double cladding i-ZnMgBeSe/ p-ZnMgSSe white-LEDs, which has exhibited long device lifetime of over 10 000 h.

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