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We have investigated by temperature-dependent photoluminescence (PL) spectroscopy as-grown GaInNAs, InGaAs, and GaAsN quantum wells (QWs) embedded in a GaAs matrix. The evolution of the PL peak position and of the PL linewidth shows evidence of a strong carrier localization for the GaInNAs QWs only. The high delocalization temperature, in the 150 K range, indicates the presence of a high density of possibly deep-localizing potential wells. In addition, a higher density of nonradiative recombination centers appears to result in stronger carrier localization. Transmission electron microscopy reveals well defined, flat interfaces, in these comparatively high N-content (yN∼0.04–0.05) QWs. Our results thus demonstrate that the origin of localization in GaInNAs QWs is the concomitant presence of both In and N, which may result in strain and/or composition fluctuations.

Abstract-In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germaniumon-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticles and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources, optical parametric oscillators and wavelength translators connecting the telecommunication wavelength range and the mid-infrared.

Abstract:We present a silicon-on-insulator (SOI) based spectrometer platform for a wide operational wavelength range. Both planar concave grating (PCG, also known as echelle grating) and arrayed waveguide grating (AWG) spectrometer designs are explored for operation in the short-wave infrared. In addition, a total of four planar concave gratings are designed to cover parts of the wavelength range from 1510 to 2300 nm. These passive wavelength demultiplexers are combined with GaInAsSb photodiodes. These photodiodes are heterogeneously integrated on SOI with benzocyclobutene (DVS-BCB) as an adhesive bonding layer. The uniformity of the photodiode characteristics and high processing yield, indicate a robust fabrication process. We demonstrate good performance of the miniature spectrometers over all operational wavelengths which paves the way to on-chip absorption spectroscopy in this wavelength range. solutions over the first overtone and combination regions of the near-infrared spectrum," Appl.

We extend to longitudinal-optical (LO) phonons the percolation model set for the basic understanding of the atypical transverse-optical (TO) one-bond→ two-mode behavior observed by Raman scattering in the Be-Se spectral range of the random Zn 1−x Be x Se alloy ͑0 ഛ x ഛ 1͒, which opens the class of mixed crystals with contrast in the bond stiffness. The study is supported by contour modeling of the TO and LO Raman line shapes. This is achieved via application of the Hon and Faust treatment to a version of the modified-randomelement-isodisplacement model generalized to multioscillators. While the TO signal clearly discriminates between Be-Se vibrations within the hard Be-rich region and the soft Zn-rich one, complexity arises in the LO symmetry due to vibration coupling via the 1ong-range longitudinal polarization field. In particular this generates a massive transfer of oscillator strength from the low-frequency ͑LO − ͒ (hard, soft)-mixed mode to the high-frequency ͑LO + ͒ one, which results in an apparent LO + single-mode behavior. Moreover the contrasts between the Zn-Se and Be-Se bond lengths and bond stiffness are proposed to force a Verleur and Barker-like (VB) discrete multimode Raman response from each region. Accordingly LO − and LO + intramode transfers of oscillator strength superimpose to the LO − → LO + intermode one. This accounts for the spectacular distortions of the LO + line shape. On the whole, the puzzling LO behavior can be regarded as the result of a cooperative phenomenon between two discrete assemblies of polar LO phonons, driven by the long-range longitudinal polarization field. Also, the Verleur and Barker description accounts for subtle unexplained behaviors in the TO symmetry. More generally it appears to provide a much attractive area for the discussion of the asymmetries of the TO and LO Raman line shapes in random alloys, as a possible alternative to the much debated spatial correlation model or to internal/external strain effects.

We have investigated by photoluminescence spectroscopy and x-ray diffraction the influence of ex situ postgrowth annealing on the properties of a series of dedicated Ga(In)(N)As ternary and quaternary quantum wells (QWs) confined by various barrier layers. We show that the low growth temperature and not N per se, is largely responsible for the low radiative efficiency of Ga(In)NAs QWs. Furthermore, postgrowth annealing induces a blueshift of the photoluminescence line in the case of quaternary GaInNAs QWs only, while x-ray diffraction reveals the absence of compositional change. We conclude with the occurrence of a local reorganization of the N-bonding configuration within the GaInNAs quaternary material during annealing.

The impact of rapid thermal annealing on the optical emission of GaInNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with high In and N content is shown to be highly dependent on the crystal structure of the QWs, as determined by transmission electron microscopy. Due to the presence of higher concentrations of nonradiative recombination centers, the annealing temperature required to obtain maximum photoluminescence emission is higher for the QW with strong structural modulation of the upper interface [at the onset of three-dimensional (3D) growth], intermediate for the two-dimensional (2D) grown QW with compositional fluctuations, and lower for the homogeneous 2D grown QW. Moreover, the transition from homogeneous 2D growth, to 2D growth with compositional fluctuations, and finally 3D growth, leads to progressively deeper carrier localization states below the conduction-band edge. Increasing annealing temperatures gradually shifts the localization states closer to the conduction-band edge, predominantly when compositional fluctuations are present. These results suggest a link between the formation of carrier localization centers and the presence of alloy fluctuations along the QW.

We investigate highly-doped InAsSb layers lattice matched onto GaSb substrates by angular-dependent reflectance. A resonant dip is evidenced near the plasma frequency of thin layers. Based on Fresnel coefficient in the case of transverse electromagnetic wave, we interpret this resonance as due to the excitation of a leaky electromagnetic mode, the Brewster "mode", propagating in the metallic layer deposited on a dielectric material. Potential interest of this mode for in situ monitoring during device fabrication is also discussed.